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quality N Channel MOSFET LRC LN2302BLT1G Featuring Low RDS ON for in Power Management and Portable Equipment factory
quality N Channel MOSFET LRC LN2302BLT1G Featuring Low RDS ON for in Power Management and Portable Equipment factory

N Channel MOSFET LRC LN2302BLT1G Featuring Low RDS ON for in Power Management and Portable Equipment

Key Attributes
Model Number: LN2302BLT1G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.8A
Operating Temperature -:
-
RDS(on):
130mΩ@1.8V,2.2A
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
22pF
Number:
1 N-channel
Output Capacitance(Coss):
72pF
Input Capacitance(Ciss):
450pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
9nC@4.5V
Mfr. Part #:
LN2302BLT1G
Package:
SOT-23
Product Description

Product Overview

The S-LN2302BLT1G and LN2302BLT1G are N-Channel Enhancement-Mode MOSFETs from Leshan Radio Company, Ltd., designed for power management applications. These devices feature a super high-density cell design for extremely low RDS(ON), offering exceptional on-resistance and maximum DC current capability. They are suitable for use in power management for notebooks, portable equipment, load switches, and DSCs. The S- prefix indicates suitability for automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Package Type: SOT-23
  • Channel Type: N-Channel Enhancement-Mode
  • Certifications: AEC-Q101 Qualified and PPAP Capable (for S- prefix models)
  • Date of Origin: May, 2015

Technical Specifications

Model Device Marking Drain-Source Voltage (VDSS) Gate-Source Voltage (VGSS) Continuous Drain Current (ID) @ TA=25 Continuous Drain Current (ID) @ TA=70 Pulsed Drain Current (IDM) Body-Diode Continuous Current (IS) Max Power Dissipation (PD) @ TA=25 Max Power Dissipation (PD) @ TA=70 Operating Junction Temperature (TJ) Junction-to-Ambient Thermal Resistance (RthJA) @ T10 sec Junction-to-Ambient Thermal Resistance (RthJA) Steady State Junction-to-Case Thermal Resistance (RJC) Gate Threshold Voltage (VGS(th)) Zero Gate Voltage Drain Current (IDSS) On-State Drain Current (ID(ON)) @ VGS=4.5V On-State Drain Current (ID(ON)) @ VGS=2.5V RDS(ON) @ VGS=4.5V, ID=2.8A RDS(ON) @ VGS=2.5V, ID=2.5A RDS(ON) @ VGS=1.8V, ID=2.2A Diode Forward Voltage (VSD) @ IS=1A, VGS=0V Total Gate Charge (Qg) @ VDS=10V, VGS=4.5V, ID=2.8A Gate-Source Charge (Qgs) Gate-Drain Charge (Qgd) Input Capacitance (Ciss) @ VDS=10V, VGS=0V, f=1MHz Output Capacitance (Coss) Reverse Transfer Capacitance (Crss) Turn-On Delay Time (td(on)) Rise Time (tr) Turn-Off Delay Time (td(off)) Fall Time (tf) Shipping (3000/Tape & Reel) Shipping (10000/Tape & Reel)
LN2302BLT1G / S-LN2302BLT1G 02B 20 V 8 V 2.8 A 2.2 A 10 A 1.6 A 1.25 W 0.8 W 150 77 /W 105 /W 70 /W 0.5 - 1.0 V 1 A 6 A 4 A 55 - 85 m 65 - 115 m 80 - 130 m 0.75 - 1.2 V 9 nC 2.2 nC 3 nC 450 pF 72 pF 22 pF 9 ns 23 ns 38 ns 3 ns ✔ ✔
LN2302BLT3G / S-LN2302BLT3G 02B 20 V 8 V 2.8 A 2.2 A 10 A 1.6 A 1.25 W 0.8 W 150 77 /W 105 /W 70 /W 0.5 - 1.0 V 1 A 6 A 4 A 55 - 85 m 65 - 115 m 80 - 130 m 0.75 - 1.2 V 9 nC 2.2 nC 3 nC 450 pF 72 pF 22 pF 9 ns 23 ns 38 ns 3 ns ✔ ✔

Dimensions (SOT-23):

Dimension Min (inches) Max (inches) Min (mm) Max (mm)
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60

1809291620_LRC-LN2302BLT1G_C135803.pdf

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