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quality High voltage fast recovery diode Littelfuse IXYS DSEP60-12A optimized for switch mode power supplies factory
quality High voltage fast recovery diode Littelfuse IXYS DSEP60-12A optimized for switch mode power supplies factory

High voltage fast recovery diode Littelfuse IXYS DSEP60-12A optimized for switch mode power supplies

Key Attributes
Model Number: DSEP60-12A
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
500A
Reverse Leakage Current (Ir):
650uA@1.2kV
Reverse Recovery Time (trr):
80ns
Operating Junction Temperature Range:
-55℃~+175℃@(Tj)
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
1.2kV
Pd - Power Dissipation:
330W
Voltage - Forward(Vf@If):
2.66V@60A
Current - Rectified:
60A
Mfr. Part #:
DSEP60-12A
Package:
TO-247AC
Product Description

Product Overview

The DSEP60-12A is a high-performance fast recovery diode featuring low loss and soft recovery characteristics. Designed with planar passivated chips, it offers very low leakage current, very short recovery times, and improved thermal behavior with very low Irm-values. Its soft reverse recovery minimizes EMI/RFI, and the avalanche voltage rating ensures reliable operation. Applications include antiparallel diodes for high-frequency switching devices, antisaturation diodes, snubber diodes, free-wheeling diodes, and rectifiers in switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).

Product Attributes

  • Brand: IXYS
  • Package: TO-247
  • Compliance: RoHS compliant
  • Material: Epoxy meets UL 94V-0

Technical Specifications

Symbol Definition Ratings Conditions Unit
DSEP60-12A Part number DSEP60-12A
VRRM max. repetitive reverse blocking voltage 1200 TVJ = 25C V
VRSM max. non-repetitive reverse blocking voltage 1300 TVJ = 25C V
IF(AV) average forward current 120 TC = 100C A
IFSM max. forward surge current 1200 t = 10 ms; (50 Hz), sine; TVJ = 45C A
Ptot total power dissipation 330 TC = 25C W
VF forward voltage drop 1.81 IF = 120 A; TVJ = 25C V
VF0 threshold voltage 1.08 TVJ = 175C V
rF slope resistance for power loss calculation only 9.4 TVJ = 175C m
IR reverse current, drain current 150 VR = 1200 V; TVJ = 25C A
IR reverse current, drain current 2.5 VR = 1200 V; TVJ = 150C mA
CJ junction capacitance 115 VR = 600 V; TVJ = 25C; f = 1 MHz pF
RthJC thermal resistance junction to case 0.45 K/W
RthCH thermal resistance case to heatsink 0.25 K/W
TVJ virtual junction temperature 175 C
Tstg storage temperature -55 to 150 C
Weight 6 g
Mounting torque 1.2 Nm
Mounting force with clip 120 N
IRMS RMS current per terminal 70 A

Fast Diode Characteristics

Parameter Conditions Typical Unit
trr IF = 60 A, -diF/dt = 200 A/s, VR = 600 V, TVJ = 100C 40 ns
IRM IF = 60 A, -diF/dt = 200 A/s, VR = 600 V, TVJ = 100C 20 A
Qr IF = 120 A, -diF/dt = 200 A/s, VR = 600 V, TVJ = 100C 220 C

Package Dimensions (TO-247)

Sym Inches Millimeter
min. max. min. max.
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.430 BSC 10.92 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
P 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
P1 - 0.29 - 7.39

2410121924_Littelfuse-IXYS-DSEP60-12A_C130473.pdf

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