NPN power transistor LRC LBTN180Y3T1G designed for amplifiers and battery driven electronic devices
Key Attributes
Model Number:
LBTN180Y3T1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
10uA
Pd - Power Dissipation:
550mW
Transition Frequency(fT):
180MHz
Type:
NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
LBTN180Y3T1G
Package:
SOT-89
Product Description
Product Overview
The LBTN180Y3T1G and S-LBTN180Y3T1G are NPN power transistors designed for high current and high power dissipation applications. They offer advantages such as compliance with RoHS requirements and Halogen Free standards. The S-prefix variants are AEC-Q101 qualified and PPAP capable, making them suitable for automotive and other applications with stringent control change requirements. These transistors are ideal for use in linear voltage regulators, low-side switches, battery-driven devices, power management, MOSFET drivers, and amplifiers.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Product Type: NPN power transistors
- Material Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified (S-prefix variants)
- PPAP Capable: Yes (S-prefix variants)
Technical Specifications
| Parameter | Symbol | LBTN180Y3T1G / S-LBTN180Y3T1G | Unit | Conditions |
| CollectorEmitter Voltage | VCEO | 80 | V | |
| CollectorBase Voltage | VCBO | 100 | V | |
| EmitterBase Voltage | VEBO | 5 | V | |
| Collector Current | IC | 1 | A | |
| Peak Collector Current (tp1 ms) | ICM | 2 | A | |
| Base Current | IB | 0.3 | A | |
| Peak Base Current (tp1 ms) | IBM | 0.3 | A | |
| Total Device Dissipation, FR-4 Board (Note 1) @ TA = 25C | PD | 550 | mW | FR-4 Board (Note 1) |
| Derate above 25C | 225 | mW/C | ||
| Thermal Resistance, JunctiontoAmbient | RJA | 4.4 | C/W | |
| JunctiontoCase | RJC | 50 | C/W | |
| Junction and Storage temperature | TJ,Tstg | -65+150 | C | |
| Collector Cutoff Current | ICBO | - | nA | VCB = 30 V,IE = 0 A |
| Collector Cutoff Current (Tj = 150) | ICBO | - | A | VCB = 30 V,IE = 0 A,Tj = 150 |
| Emitter Cut-off Current | IEBO | - | nA | VEB =5V, IC =0 |
| DC Current Gain | HFE | 100, 250, 45 | - | VCE = 2 V, IC = 5 mA, 150 mA, 500 mA |
| CollectorEmitter Saturation Voltage | VCE(sat) | - | V | IC = 500 mA,IB = 50 mA |
| Base-Emitter voltage | VBE | - | V | VCE = 2 V, IC = 500 mA |
| Transition Frequency | fT | 100 | MHz | VCE = 5 V,IC = 50 mA,f = 100 MHz |
| Collector Capacitance | Cc | - | pF | VCB = 10 V,IE = ie = 0 A,f = 1 MHz |
| CollectorEmitter Breakdown Voltage | VBR(CEO) | 80 | V | IC = 1 mA,IB = 0 |
| CollectorBase Breakdown Voltage | VBR(CBO) | 100 | V | IC = 100 A,IE = 0 |
| EmitterBase Breakdown Voltage | VBR(EBO) | 5 | V | IE = 100 A,IC = 0 |
| Collector-Emitter cutoff Current | ICEO | - | A | VCE= 80V,IB=0 |
2410010403_LRC-LBTN180Y3T1G_C2982812.pdf
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