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quality Fast recovery epitaxial diode Littelfuse IXYS DSEI2X31-06C with isolated backside and RoHS compliance factory
quality Fast recovery epitaxial diode Littelfuse IXYS DSEI2X31-06C with isolated backside and RoHS compliance factory

Fast recovery epitaxial diode Littelfuse IXYS DSEI2X31-06C with isolated backside and RoHS compliance

Key Attributes
Model Number: DSEI2X31-06C
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
300A
Reverse Leakage Current (Ir):
100uA
Operating Junction Temperature Range:
-40℃~+150℃
Voltage - DC Reverse (Vr) (Max):
600V
Pd - Power Dissipation:
105W
Voltage - Forward(Vf@If):
1.51V@30A
Current - Rectified:
30A
Mfr. Part #:
DSEI2X31-06C
Package:
SOT-227B
Product Description

Product Overview

The DSEI2x31-06C is a low-loss, soft-recovery Fast Recovery Epitaxial Diode featuring parallel legs. Designed with planar passivated chips, it offers low leakage current, very short recovery times, and improved thermal behavior with very low Irm-values. Its soft reverse recovery characteristic minimizes EMI/RFI, and low Irm reduces power dissipation and turn-on losses in commutating switches. This diode is ideal as an antiparallel diode for high-frequency switching devices, an antisaturation diode, a snubber diode, or a free-wheeling diode in switch mode power supplies (SMPS) and uninterruptible power supplies (UPS). The device is housed in a SOT-227B (minibloc) package, an industry-standard outline that is RoHS compliant and features an isolated backside.

Product Attributes

  • Brand: IXYS
  • Package: SOT-227B (minibloc)
  • Certifications: RoHS compliant, Epoxy meets UL 94V-0
  • Backside: Isolated
  • Base plate: Copper internally DCB isolated

Technical Specifications

Symbol Definition Conditions Unit typ. max. min.
DSEI2x31-06C Part number
VRRM max. repetitive reverse blocking voltage TVJ = 25C V 600
VRMS RMS current per terminal A 70
VRSM max. non-repetitive reverse blocking voltage TVJ = 25C V 600
IF (AV) average forward current TC = 100C A 30
IFSM max. forward surge current t = 10 ms; (50 Hz), sine; TVJ = 45C A 300
VF forward voltage drop IF = 30 A; TVJ = 25C V 1.10 1.34
VF0 threshold voltage TVJ = 150C V 1.68
rF slope resistance for power loss calculation only TVJ = 150C m 7.9
Ptot total power dissipation TC = 25C W 105
RthJC thermal resistance junction to case K/W 0.10
RthCH thermal resistance case to heatsink K/W 0.02
TVJ virtual junction temperature C 150
Tstg storage temperature C -40 150
Isolation Voltage t = 1 minute V~ 3000
rr reverse recovery time IF = 37 A; -diF/dt = 20 A/s; VR = 350 V; TVJ = 100C ns 35
IRM max. reverse recovery current IF = 37 A; -diF/dt = 20 A/s; VR = 350 V; TVJ = 100C A 9
Qr reverse recovery charge IF = 37 A; -diF/dt = 20 A/s; VR = 350 V; TVJ = 100C C 5.5
Mounting torque Nm 1.5
Terminal torque Nm 1.1
Weight g 30
Creepage distance on surface dSpp/App mm 10.5
Striking distance through air dSpb/Apb mm 3.2
Terminal to backside mm 8.6
Terminal to terminal mm 6.8

2410121747_Littelfuse-IXYS-DSEI2X31-06C_C7498239.pdf

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