LRC LPB8917DT0AG P Channel 150V MOSFET Featuring Fast Switching Speed and Low RDS on for Load Switches
Key Attributes
Model Number:
LPB8917DT0AG
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
1.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
750mΩ@10V,3A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
30pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
659pF@15V
Pd - Power Dissipation:
1.6W
Gate Charge(Qg):
10nC@30V
Mfr. Part #:
LPB8917DT0AG
Package:
DFN3333-8A
Product Description
Product Overview
The LPB8917DT0AG is a P-Channel 150-V (D-S) MOSFET featuring low RDS(on) trench technology, low thermal impedance, and fast switching speed. It is designed for applications such as load switches, DC/DC conversion, and motor drives. The material complies with RoHS requirements and is Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements, Halogen Free
- Device Marking: A17
- Package Type: DFN3333-8A
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VBRDSS | -150 | V | VGS = 0, ID = -250A | ||
| Gate Threshold Voltage | VGS(th) | -2 | V | VDS =VGS , ID =-250A | ||
| Gate Leakage Current | IGSS | 100 | nA | VDS =0V, VGS =20V | ||
| Zero Gate Voltage Drain Current | IDSS | 0.001 | 0.1 | A | VDS = -120 V, VGS = 0 V (TJ = 25C) | |
| Zero Gate Voltage Drain Current | IDSS | 1 | 10 | A | VDS = -120 V, VGS = 0 V (TJ = 55C) | |
| Drain-Source On-Resistance | RDS(ON) | 0.75 | VGS = -10 V, ID = -3 A | |||
| Drain-Source On-Resistance | RDS(ON) | 0.9 | VGS = -6.5 V, ID = -2 A | |||
| Diode Forward Voltage | VSD | -0.83 | V | IS = -2.1 A, VGS = 0 V | ||
| Total Gate Charge | Qg | 10 | nC | VDS= -30V,VGS= -10V,ID=-4A | ||
| Gate-Source Charge | Qgs | 2.8 | nC | VDS= -30V,VGS= -10V,ID=-4A | ||
| Gate-Drain Charge | Qgd | 2.7 | nC | VDS= -30V,VGS= -10V,ID=-4A | ||
| Turn-On Delay Time | td(on) | 7 | ns | VDS = -30 V, RL = 7.5 ,ID = -4 A,VGEN = -10 V, RGEN = 6 | ||
| Rise Time | tr | 14 | ns | VDS = -30 V, RL = 7.5 ,ID = -4 A,VGEN = -10 V, RGEN = 6 | ||
| Turn-Off Delay Time | td(off) | 37 | ns | VDS = -30 V, RL = 7.5 ,ID = -4 A,VGEN = -10 V, RGEN = 6 | ||
| Fall Time | tf | 5 | ns | VDS = -30 V, RL = 7.5 ,ID = -4 A,VGEN = -10 V, RGEN = 6 | ||
| Input Capacitance | Ciss | 659 | pF | (VDS = -15 V, VGS = 0 V, f = 1 MHz) | ||
| Output Capacitance | Coss | 40 | pF | (VDS = -15 V, VGS = 0 V, f = 1 MHz) | ||
| Reverse Transfer Capacitance | Crss | 30 | pF | (VDS = -15 V, VGS = 0 V, f = 1 MHz) | ||
| Gate Resistance | Rg | 3 | (VDS=0V,VGS=0V,f=1MHz) | |||
| Power Dissipation | PD | 2.4 | W | TA = 25 (Note1) | ||
| Power Dissipation | PD | W | TA = 70 (Note1) | |||
| Continuous Drain Current | ID | -3 | A | TA = 25 (Note1) | ||
| Continuous Drain Current | ID | -1.8 | A | TA = 70 (Note1) | ||
| Pulsed Drain Current | IDM | -20 | A | (Note2) | ||
| Continuous Source Current (Diode Conduction) | IS | -0.5 | A | (Note1) | ||
| Avalanche Current | IAS | -8 | A | (L=0.1mH) | ||
| Avalanche Energy | EAS | 9 | mJ | (L=0.1mH) | ||
| Operating Junction and Storage Temperature Range | TJ,Tstg | -55 | 150 | |||
| Maximum Junction-to-Ambient Thermal Resistance | RJA | 45 | /W | t 10 s (Note1) | ||
| Maximum Junction-to-Ambient Thermal Resistance | RJA | 95 | /W | Steady State (Note1) | ||
| Drain-Source Voltage | VDS | -150 | V | |||
| Gate-Source Voltage | VGS | -12 | V |
Package Dimensions (DFN3333-8A)
| DIM | MIN | NOR | MAX | Unit |
|---|---|---|---|---|
| A | 0.60 | 0.65 | 0.70 | mm |
| A1 | 0.00 | 0.03 | 0.05 | mm |
| b | 0.27 | 0.32 | 0.37 | mm |
| D | 3.25 | 3.30 | 3.35 | mm |
| E | 3.25 | 3.30 | 3.35 | mm |
| D1 | 2.22 | 2.27 | 2.32 | mm |
| E1 | 1.60 | 1.65 | 1.70 | mm |
| e | 0.65 | BSC | ||
| L | 0.40 | 0.45 | 0.50 | mm |
| L1 | 0.30 | 0.35 | 0.40 | mm |
2410010133_LRC-LPB8917DT0AG_C5273513.pdf
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