Littelfuse IXYS MEO500-06DA Fast Recovery Diode Module with Planar Passivated Chip and Soft Recovery
Key Attributes
Model Number:
MEO500-06DA
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
5.28kA
Reverse Leakage Current (Ir):
24mA@600V
Reverse Recovery Time (trr):
300ns
Diode Configuration:
1 Independent
Operating Junction Temperature Range:
-40℃~+150℃
Voltage - DC Reverse (Vr) (Max):
600V
Pd - Power Dissipation:
1750W
Voltage - Forward(Vf@If):
1.52V@520A
Current - Rectified:
514A
Mfr. Part #:
MEO500-06DA
Package:
Y4-M6
Product Description
Product Overview
The IXYS MEO 500-06DA is a Fast Recovery Epitaxial Diode (FRED) module designed for high-frequency switching applications. It features a planar passivated chip with a short and soft recovery time, contributing to low switching losses and reduced voltage peaks. This module is built with an international standard package incorporating a DCB ceramic base plate, offering high reliability and low noise operation. Its applications include antiparallel diodes for high-frequency devices, free-wheeling diodes in converters and motor control, inductive heating, UPS, and ultrasonic equipment.
Product Attributes
- Brand: IXYS
- Package Type: Y4-M6
- Base Plate Material: DCB Ceramic
- Chip Technology: Planar Passivated
- Recovery Behavior: Soft Recovery
- Backside: Isolated
Technical Specifications
| Specification | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| Diode Ratings | |||||
| Non-repetitive reverse voltage (VRSM) | TVJ = 25C | 600 | V | ||
| Repetitive reverse voltage (VRRM) | TVJ = 25C | 600 | V | ||
| Reverse current (IR) | VR = VRRM, TVJ = 25C | 4 | mA | ||
| Reverse current (IR) | VR = 0.8VRRM, TVJ = 125C | 160 | mA | ||
| Forward voltage (VF) | IF = 300 A, TVJ = 25C | 1.35 | V | ||
| Forward voltage (VF) | IF = 300 A, TVJ = 125C | 1.17 | V | ||
| Forward voltage (VF) | IF = 520 A, TVJ = 25C | 1.52 | V | ||
| Forward voltage (VF) | IF = 520 A, TVJ = 125C | 1.41 | V | ||
| RMS forward current (IFRMS) | TC = 75C | 726 | A | ||
| Average forward current (IFAVM) | TC = 75C, rectangular, d = 0.5 | 514 | A | ||
| Threshold voltage (VT0) | TVJ = TVJM | 0.85 | V | ||
| Slope resistance (rT) | TVJ = TVJM | 1.09 | m | ||
| Thermal resistance junction to case (RthJC) | 0.043 | K/W | |||
| Thermal resistance junction to heatsink (RthCH) | 0.071 | K/W | |||
| Total power dissipation (Ptot) | TVJ = 25C | 1750 | W | ||
| Max. surge forward current (IFSM) | t = 10 ms (50 Hz), sine, TVJ = 45C | 4.80 | kA | ||
| Max. surge forward current (IFSM) | t = 8.3 ms (60 Hz), sine, TVJ = 45C | 5.28 | kA | ||
| Max. surge forward current (IFSM) | t = 10 ms (50 Hz), sine, TVJ = 150C | 4.32 | kA | ||
| Max. surge forward current (IFSM) | t = 8.3 ms (60 Hz), sine, TVJ = 150C | 4.75 | kA | ||
| I2t value for fusing (I2t) | t = 10 ms (50 Hz), sine, TVJ = 45C | 115.2 | kAs | ||
| I2t value for fusing (I2t) | t = 8.3 ms (60 Hz), sine, TVJ = 45C | 117.1 | kAs | ||
| I2t value for fusing (I2t) | t = 10 ms (50 Hz), sine, TVJ = 150C | 93.3 | kAs | ||
| I2t value for fusing (I2t) | t = 8.3 ms (60 Hz), sine, TVJ = 150C | 94.8 | kAs | ||
| Max. reverse recovery time (trr) | IF = 600 A; -diF/dt = 800 A/s, TVJ = 25C | 140 | ns | ||
| Max. reverse recovery time (trr) | IF = 600 A; -diF/dt = 800 A/s, TVJ = 100C | 250 | ns | ||
| Max. reverse recovery current (IRM) | VR = 300 V; L 0.05 H, TVJ = 25C | 70 | A | ||
| Max. reverse recovery current (IRM) | VR = 300 V; L 0.05 H, TVJ = 100C | 110 | A | ||
| Reverse recovery time (IRM) | VR = 300 V; L 0.05 H, TVJ = 25C | 200 | ns | ||
| Reverse recovery time (IRM) | VR = 300 V; L 0.05 H, TVJ = 100C | 300 | ns | ||
| Package Y4-M6 Ratings | |||||
| RMS current per terminal (IRMS) | 300 | A | |||
| Virtual junction temperature (TVJ) | -40 | 150 | C | ||
| Operation temperature (Top) | -40 | 125 | C | ||
| Storage temperature (Tstg) | -40 | 125 | C | ||
| Weight | 150 | g | |||
| Mounting torque (MD) | 2.25 | 2.75 | Nm | ||
| Terminal torque (MT) | 4.5 | 5.5 | Nm | ||
| Creepage distance on surface (dSpp/App) | Terminal to terminal | 14.0 | 16.0 | mm | |
| Striking distance through air (dSpb/Apb) | Terminal to backside | 10.0 | 16.0 | mm | |
| Isolation voltage (VISOL) | t = 1 second, 50/60 Hz, RMS; IISOL < 1 mA | 3600 | V~ | ||
| Isolation voltage (VISOL) | t = 1 minute, 50/60 Hz, RMS; IISOL < 1 mA | 3000 | V~ | ||
| Dimensions (Y4-M6) | |||||
| a | 30.0 | 30.6 | mm | ||
| b | 64.0 | 65.0 | mm | ||
| c | 6.5 | mm | |||
| d | 7.0 | mm | |||
| e | 4.9 | 5.1 | mm | ||
| h | 93.5 | 94.5 | mm | ||
| i | 79.5 | 80.5 | mm | ||
| k | 33.4 | 34.0 | mm | ||
| l | 16.7 | 17.3 | mm | ||
| m | 22.7 | 23.3 | mm | ||
| n | 22.7 | 23.3 | mm | ||
| o | 14.0 | 15.0 | mm | ||
| p | 0.25 | mm |
IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
2410121919_Littelfuse-IXYS-MEO500-06DA_C7427684.pdf
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