motor drive applications using LRC LN3424DT2AG N Channel Enhancement MOSFET with trench technology
Key Attributes
Model Number:
LN3424DT2AG
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
12A
RDS(on):
16.5mΩ@4.5V,5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.8V
Reverse Transfer Capacitance (Crss@Vds):
119pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.136nF@15V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
LN3424DT2AG
Package:
DFN2020-6S
Product Description
Product Overview
The LN3424DT2G is a 30V N-Channel Enhancement MOSFET designed for efficient power management applications. Featuring low RDS(ON) achieved through trench technology, it offers fast switching speeds and a low thermal impedance. This MOSFET is suitable for DC/DC conversion, power routing, and motor drive applications.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Product Type: N-Channel Enhancement MOSFET
- Material Compliance: Halogen Free, RoHS compliant
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Notes |
|---|---|---|---|---|---|---|
| DrainSource Breakdown Voltage | V(BR)DSS | 30 | - | - | V | (VDS = VGS , ID = 250 uA) |
| Gate-Source Threshold Voltage | VGS(th) | - | 1.55 | - | V | (VGS = 0V , ID = 250 uA) |
| Gate-Body Leakage | IGSS | - | - | 100 | nA | (VDS = 0 V, VGS = 20 V) |
| Zero Gate Voltage Drain Current | IDSS | - | - | 1 | A | (VDS = 24 V, VGS = 0 V) |
| Zero Gate Voltage Drain Current (High Temp) | IDSS | - | - | 8 | A | (VDS = 24 V, VGS = 0 V, TJ = 55C) |
| Drain-Source On-Resistance | RDS(on) | - | 10.5 | - | m | (VGS = 10 V, ID = 6 A) |
| Drain-Source On-Resistance | RDS(on) | - | 16.5 | - | m | (VGS = 4.5 V, ID = 5 A) |
| Diode Forward Voltage | VSD | - | - | 1.55 | V | (IS = 1.9 A, VGS = 0 V) |
| Continuous Drain Current | ID | - | - | 40 | A | (Note 1) |
| Pulsed Drain Current | IDM | - | - | 40 | A | (Note 2) |
| Continuous Source Current (Diode Conduction) | IS | - | - | 3.8 | A | (Note 1) |
| Power Dissipation | PD | - | 2.4 | - | W | (Note 1, TA = 25C) |
| Power Dissipation | PD | - | 1.4 | - | W | (Note 1, TA = 70C) |
| Maximum Junction-to-Ambient Thermal Resistance | RJA | - | 90 | - | C/W | (Note 1, Steady State) |
| Operating Junction and Storage Temperature Range | TJ , TSTG | -55 | - | 150 | C | - |
| Gate-to-Source Voltage | VGS | - | - | 20 | V | - |
| Total Gate Charge | Qg | - | 11 | - | nC | (VDS = 15 V, VGS = 4.5 V, ID = 6 A) |
| Gate-Source Charge | Qgs | - | 4.3 | - | nC | (VDS = 15 V, ID = 6 A) |
| Gate-Drain Charge | Qgd | - | 3.2 | - | nC | (VDS = 15 V, ID = 6 A) |
| Turn-On Delay Time | td(on) | - | 6 | - | ns | (VGS = 10 V, ID = 6 A) |
| Rise Time | tr | - | 11 | - | ns | (VGS = 10 V, ID = 6 A) |
| Turn-Off Delay Time | td(off) | - | 29 | - | ns | (VGS = 10 V, ID = 6 A) |
| Fall Time | tf | - | 6 | - | ns | (VGS = 10 V, ID = 6 A) |
| Input Capacitance | Ciss | - | 1136 | - | pF | (VDS = 15 V, VGS = 0 V, f = 1 MHz) |
| Output Capacitance | Coss | - | 133 | - | pF | (VDS = 15 V, VGS = 0 V, f = 1 MHz) |
| Reverse Transfer Capacitance | Crss | - | 119 | - | pF | (VDS = 15 V, VGS = 0 V, f = 1 MHz) |
| Gate Resistance | Rg | - | 0.72 | - | (VGS = 0 V, VDS=0V,f=1MHz) | |
| Model | - | LN3424DT2AG | ||||
| Device Marking | - | 2B | ||||
| Shipping | - | 4000/Tape&Reel | ||||
| Package Type | - | DFN2020-6S | ||||
| Package Dimensions (mm) | - | D: 1.95-2.05, E: 1.95-2.05, A: 0.60-0.70, A1: 0.01-0.05, b: 0.25-0.35 | ||||
| Soldering Footprint Dimensions (mm) | - | X: 0.40, X1: 0.95, X2: 1.70, e: 0.65 | ||||
2410010232_LRC-LN3424DT2AG_C976212.pdf
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