dual general purpose transistor LRC S-LBC856BDW1T1G designed for automotive and control change needs
Key Attributes
Model Number:
S-LBC856BDW1T1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
100MHz
Type:
-
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S-LBC856BDW1T1G
Package:
SOT-363
Product Description
Product Overview
The LBC856BDW1T1G and S-LBC856BDW1T1G are dual general-purpose transistors designed for automotive and other applications requiring unique site and control change requirements. The S-prefix variants are AEC-Q101 qualified and PPAP capable. These transistors are compliant with RoHS requirements and Halogen Free materials.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified (S-prefix), PPAP capable (S-prefix)
Technical Specifications
| Model | Description | Collector-Base Voltage (VCBO) | Collector-Emitter Voltage (VCEO) | Emitter-Base Voltage (VEBO) | Collector Current (Continuous) (IC) | Total Device Dissipation (PD) | Thermal Resistance, Junction to Ambient (RJA) | Junction and Storage Temperature (TJ, Tstg) | Collector Cutoff Current (ICBO) | DC Current Gain (hFE) | Collector-Emitter Saturation Voltage (VCE(sat)) | Base-Emitter Saturation Voltage (VBE(sat)) | Base-Emitter Voltage (VBE(on)) | Current-Gain Bandwidth Product (fT) | Output Capacitance (Cob) | Noise Figure (NF) |
| LBC856BDW1T1G S-LBC856BDW1T1G | Dual General Purpose Transistors | -80 V | -65 V | -5 V | -100 mA | 250 mW | 500 C/W | -55+150 C | -15 nA -4 nA (TA=150C) | 290 - 475 320 (IC=-2.0 mA, VCE=-5.0 V) | -0.65 V -0.9 V (IC=-100 mA, IB=-5.0 mA) | -0.7 V -0.82 V (IC=-100 mA, IB=-5.0 mA) | -0.6 V -0.75 V (IC=-10 mA, VCE=-5.0 V) | 100 MHz | 10 pF | 4.5 dB |
| LBC856BDW1T3G | Dual General Purpose Transistors | -80 V | -65 V | -5 V | -100 mA | 250 mW | 500 C/W | -55+150 C | -15 nA -4 nA (TA=150C) | 290 - 475 320 (IC=-2.0 mA, VCE=-5.0 V) | -0.65 V -0.9 V (IC=-100 mA, IB=-5.0 mA) | -0.7 V -0.82 V (IC=-100 mA, IB=-5.0 mA) | -0.6 V -0.75 V (IC=-10 mA, VCE=-5.0 V) | 100 MHz | 10 pF | 4.5 dB |
2410010201_LRC-S-LBC856BDW1T1G_C5383080.pdf
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