Dual NPN PNP transistors LRC LBC847CPDW1T1G in SOT363 package designed for amplifier and surface mount

Key Attributes
Model Number: LBC847CPDW1T1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
380mW
Transition Frequency(fT):
100MHz
Type:
NPN+PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBC847CPDW1T1G
Package:
SOT-363(SC-88)
Product Description

Product Overview

Dual General Purpose Transistors (NPN/PNP Complimentary) designed for general purpose amplifier applications. Housed in the SOT363/SC88 package, ideal for low power surface mount applications.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Package: SOT363/SC88
  • Certifications: AEC-Q101 Qualified and PPAP Capable. RoHS compliant.

Technical Specifications

ModelTypeVCEO (V)VCBO (V)VEBO (V)IC Continuous (mAdc)V(BR)CEO (V)V(BR)CES (V)V(BR)CBO (V)V(BR)EBO (V)ICBO (nA/A)hFE (Min/Typ)VCE(sat) (V)VBE(sat) (V)fT (MHz)Cobo (pF)NF (dB)
LBC846/LBC847/LBC848NPN65/45/3080/50/306.0/6.0/5.010065/45/3080/50/3080/50/306.0/6.0/5.015 nA / 5.0 A200/420 (B), 290/520 (C)0.25/0.60.7/0.91004.510
LBC846/LBC847/LBC848PNP-65/-45/-30-80/-50/-30-5.0/-5.0/-5.0-100-65/-45/-30-80/-50/-30-80/-50/-30-5.0/-5.0/-5.0-15 nA / -4.0 A200/420 (B), 290/520 (C) @ -10A; 150/270 (B), 475/800 (C) @ -2.0mA-0.3/-0.65-0.7/-0.91004.510

Thermal Characteristics

CharacteristicSymbolMaxUnit
Total Device Dissipation Per Device FR-5 Board (1) TA = 25CPD380mW
Derate Above 25C250mW/C
Thermal Resistance, Junction to AmbientRJA328C/W
Junction and Storage Temperature RangeTJ, Tstg-55 to +150C

2202090930_LRC-LBC847CPDW1T1G_C2972799.pdf

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