30V P Channel MOSFET LRC LP2305LT1G Offering Ultra Low On Resistance and Halogen Free SOT 23 Package
Key Attributes
Model Number:
LP2305LT1G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
130mΩ@2.5V,1A
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
53.18pF
Number:
1 P-Channel
Output Capacitance(Coss):
90.74pF
Input Capacitance(Ciss):
826.18pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
6.36nC@15V
Mfr. Part #:
LP2305LT1G
Package:
SOT-23
Product Description
Product Overview
The LP2305LT1G is a 30V P-Channel Enhancement-Mode MOSFET designed with advanced trench process technology and a high-density cell design for ultra-low on-resistance. This device is suitable for various applications and is Halogen Free, complying with RoHS requirements.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material: Halogen Free
- Compliance: RoHS requirements
- Package Type: SOT 23 (TO236AB)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| ELECTRICAL CHARACTERISTICS (Ta= 25) | ||||||
| DraintoSource Breakdown Voltage | V(BR)DSS | -30 | V | VGS = 0 V, ID = -250 A | ||
| Gate Threshold Voltage | VGS(TH) | -0.7 | -1.3 | V | VGS = VDS, ID =- 250 A | |
| Zero Gate Voltage Drain Current | IDSS | -1 | A | VDS=-24V, VGS=0V | ||
| GatetoSource Leakage Current | IGSS | 100 | nA | VDS = 0 V, VGS = 12 V | ||
| STATIC DraintoSource On Resistance | ||||||
| RDS(on) | 53 | 70 | m | VGS = -10V, ID =-4.2 A | ||
| RDS(on) | 64 | 85 | m | VGS = -4.5 V, ID =-4 A | ||
| RDS(on) | 86 | 130 | m | VGS = -2.5 V, ID = -1 A | ||
| Forward Diode Voltage | VSD | -1 | V | VGS = 0 V, ISD = -1A | ||
| Forward Transconductance | gFS | 7 | 11 | S | VDS = -5.0 V, ID = -5 A | |
| DYNAMIC | ||||||
| Input Capacitance | Ciss | 826.18 | pF | VGS = 0 V, f = 1.0 MHz, VDS= -15 V | ||
| Output Capacitance | Coss | 90.74 | pF | |||
| Reverse Transfer Capacitance | Crss | 53.18 | pF | |||
| Total Gate Charge | QG | 6.36 | nC | VGS =-15 V,VDS = -4.5V ID = -4A | ||
| GatetoSource Gate Charge | QGS | 1.79 | nC | |||
| GatetoDrain Charge | QGD | 1.42 | nC | |||
| TurnOn Delay Time | td(on) | 11.36 | ns | VDD = -15V, RL =3.6 D = 1, VGEN = -10V RG = 6 3. Pulse Test: Pulse width300s, duty cycle 2%. | ||
| Rise Time | tr | 2.32 | ns | |||
| TurnOff Delay Time | td(off) | 34.88 | ns | |||
| Fall Time | tf | 3.52 | ns | |||
| MAXIMUM RATINGS (Ta = 25) | ||||||
| DraintoSource Voltage | VDSS | -30 | V | |||
| GatetoSource Voltage | VGS | 12 | 12 | V | ||
| Continuous Drain Current | ID | -4.2 | A | |||
| Pulsed Drain Current (Note1) | IDM | -30 | A | |||
| Total Power Dissipation | PD | 1.4 | W | |||
| Operating and Storage Temperature Range | TJ, Tstg | 55 | +150 | C | ||
| Thermal Resistance-Junction to Ambient (Note2) | RJA | 140 | C/W | 2. 1-in2 2oz Cu PCB board | ||
| Device Marking | Model | Shipping |
|---|---|---|
| P05 | LP2305LT1G | 3000/Tape&Reel |
| P05 | LP2305LT3G | 10000/Tape&Reel |
| Dimensions (mm) | MIN | MAX |
|---|---|---|
| A | 2.80 | 3.04 |
| B | 1.20 | 1.40 |
| C | 0.89 | 1.11 |
| D | 0.37 | 0.50 |
| G | 1.78 | 2.04 |
| H | 0.013 | 0.100 |
| J | 0.085 | 0.177 |
| K | 0.35 | 0.69 |
| L | 0.89 | 1.02 |
| S | 2.10 | 2.64 |
| V | 0.45 | 0.60 |
1809051321_LRC-LP2305LT1G_C131734.pdf
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