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quality 30V P Channel Enhancement Mode MOSFET LRC LP3475T1G with Low On State Resistance and RoHS Compliance factory
quality 30V P Channel Enhancement Mode MOSFET LRC LP3475T1G with Low On State Resistance and RoHS Compliance factory

30V P Channel Enhancement Mode MOSFET LRC LP3475T1G with Low On State Resistance and RoHS Compliance

Key Attributes
Model Number: LP3475T1G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.5A
RDS(on):
90mΩ@4.5V,3A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V
Reverse Transfer Capacitance (Crss@Vds):
52pF@15V
Number:
1 P-Channel
Pd - Power Dissipation:
900mW
Input Capacitance(Ciss):
534pF@15V
Gate Charge(Qg):
5.6nC@4.5V
Mfr. Part #:
LP3475T1G
Package:
SOT-23-6
Product Description

Product Overview

The LP3475T1G is a 30V P-Channel Enhancement-Mode MOSFET designed for various applications. It offers low on-state resistance with RDS(ON) as low as 65m at VGS = -10V and 90m at VGS = -4.5V. This device complies with RoHS requirements and is Halogen Free, ensuring material compliance. It is available in a SOT23-6 package and is supplied on tape and reel.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Model: LP3475T1G
  • Type: P-Channel Enhancement-Mode MOSFET
  • Voltage Rating: 30V
  • Material Compliance: RoHS requirements and Halogen Free
  • Package: SOT23-6
  • Marking: A75
  • Supply: 3000/Tape&Reel

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Notes
DrainSource Voltage VDSS -30 V
GatetoSource Voltage VGS 20 V
Continuous Drain Current ID -4.5 A Ta=25
Continuous Drain Current ID -3.5 A Ta=70
Pulsed Drain Current IDM -11 A Note 2
Pulsed Drain Current IDM -2.7 A Note 3
Power Dissipation PD 1.4 W Ta=25, Note 1
Power Dissipation PD 0.9 W Ta=70, Note 1
Power Dissipation PD 0.8 W Note 3
Junction and Storage Temperature Range Tj,Tstg -55 +150
Avalanche Current IAS 11 A
Avalanche energy(L=0.1mH) EAS 6.05 mJ
DrainSource Breakdown Voltage VBRDSS -30 V VGS = 0, ID = -250A
Zero Gate Voltage Drain Current IDSS -1 A VGS = 0, VDS = -24 V
Gate Leakage Current IGSS 100 nA VDS =0V, VGS =20V
Gate Threshold Voltage VGS(th) -1 -1.5 -1.6 V VDS = VGS, ID = -250A
Static DrainSource OnState Resistance RDS(on) 65 m VGS =-10V, ID =-4A
Static DrainSource OnState Resistance RDS(on) 90 m VGS =-4.5V, ID =-3A
Forward Voltage VSD -1.3 V VGS = 0 V, IS = -1A
Input Capacitance Ciss 534 pF VGS = 0 V, f = 1.0MHz,VDS= -15 V
Output Capacitance Coss 60 pF VGS = 0 V, f = 1.0MHz,VDS= -15 V
Reverse Transfer Capacitance Crss 5.6 pF VGS = 0 V, f = 1.0MHz,VDS= -15 V
Total Gate Charge Qg(10V) 11.4 nC (VDS =-15V, ID =-4A)
Total Gate Charge Qg(4.5V) 9.8 nC (VDS =-15V, ID =-3A)
Gate-Source Charge Qgs 2.3 nC
Gate-Drain Charge Qgd 1.3 nC
Turn-On Delay Time td(on) 19.2 ns (VDS = -15V, RL= 3.6 ,VGS = -10V,RG = 3)
Rise Time tr 6.7 ns (VDS = -15V, RL= 3.6 ,VGS = -10V,RG = 3)
Turn-Off Delay Time td(off) 12 ns (VDS = -15V, RL= 3.6 ,VGS = -10V,RG = 3)
Fall Time tf 3.6 ns (VDS = -15V, RL= 3.6 ,VGS = -10V,RG = 3)
Thermal Resistance, Junction-to-Ambient RJA 89 /W Note 1
Thermal Resistance, Junction-to-Case RJC 30 /W
Thermal Resistance, Junction-to-Ambient RJA 160 /W Note 3

Notes:

  • 1. Surface mounted on "1.5 x 1.5" FR4 board using 1 sq in pad, 2 oz Cu
  • 2. Pulse width limited by maximum junction temperature.
  • 3. Surface mounted on FR4 board using the minimum recommended pad size.

2404091718_LRC-LP3475T1G_C5160885.pdf

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