driver transistor LRC LMBTA05LT1G in SOT23 package with AECQ101 qualification and RoHS compliance
Key Attributes
Model Number:
LMBTA05LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
4V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBTA05LT1G
Package:
SOT-23
Product Description
Product Overview
The LMBTA05LT1G and LMBTA06LT1G are driver transistors from LESHAN RADIO COMPANY, LTD., housed in a SOT-23 package. These transistors are designed for various applications requiring reliable driver functionality. The "S-" prefix variants are qualified for automotive and other applications with unique site and control change requirements, including AEC-Q101 qualification and PPAP capability.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Package Type: SOT-23
- Certifications: AEC-Q101 Qualified (S- prefix variants)
- Compliance: RoHS requirements
Technical Specifications
| Characteristic | Symbol | LMBTA05 | LMBTA06 | Unit | Conditions | |
| MAXIMUM RATINGS | ||||||
| CollectorEmitter Voltage | V CEO | 60 | 80 | Vdc | ||
| CollectorBase Voltage | V CBO | 60 | 80 | Vdc | ||
| EmitterBase Voltage | V EBO | 4.0 | Vdc | |||
| Collector Current Continuous | I C | 500 | mAdc | |||
| THERMAL CHARACTERISTICS | ||||||
| Total Device Dissipation FR 5 Board | P D | 225 | mW | TA = 25C | ||
| Derate above 25C | 1.8 | mW/C | ||||
| Thermal Resistance, Junction to Ambient | R JA | 556 | C/W | FR 5 Board | ||
| Total Device Dissipation Alumina Substrate | P D | 300 | mW | TA = 25C | ||
| Derate above 25C | 2.4 | mW/C | ||||
| Thermal Resistance, Junction to Ambient | R JA | 417 | C/W | Alumina Substrate | ||
| Junction and Storage Temperature | T J , T stg | 55 to +150 | C | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| CollectorEmitter Breakdown Voltage | V (BR)CEO | 60 | 80 | Vdc | I C = 1.0 mAdc, I B = 0 | |
| EmitterBase Breakdown Voltage | V (BR)EBO | 4.0 | Vdc | I E = 100 Adc, I C = 0 | ||
| Collector Cutoff Current | I CES | 0.1 | Adc | V CE = 60Vdc, I B = 0 | ||
| Emitter Cutoff Current | I CBO | 0.1 | Adc | V CB = 60Vdc, I E = 0 (LMBTA05); V CB = 80Vdc, I E = 0 (LMBTA06) | ||
| DC Current Gain | hFE | 100 | I C = 10 mAdc, V CE = 1.0 Vdc; I C = 100 mAdc, V CE = 1.0 Vdc | |||
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.25 | Vdc | I C = 100 mAdc, I B = 10 mAdc | ||
| BaseEmitter On Voltage | V BE(sat) | 1.2 | Vdc | I C = 100 mAdc, V CE= 1.0 Vdc | ||
| Current Gain Bandwidth Product | fT | 100 | MHz | V CE = 2.0 V, I C = 10mA, f = 100 MHz | ||
2304140030_LRC-LMBTA05LT1G_C79019.pdf
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