Durable Automotive Transistor LRC S-LBC846BLT1G NPN Silicon with RoHS Compliance and PPAP Capability
Key Attributes
Model Number:
S-LBC846BLT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S-LBC846BLT1G
Package:
SOT-23
Product Description
Product Overview
The LBC846BLT1G and S-LBC846BLT1G are NPN Silicon General Purpose Transistors designed for automotive and other applications requiring unique site and control change requirements. They are AEC-Q101 qualified and PPAP capable, offering reliable performance with features like high ESD protection and RoHS and Halogen Free compliance.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material: RoHS compliant and Halogen Free
- Certifications: AEC-Q101 qualified, PPAP capable
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Notes |
| MAXIMUM RATINGS (Ta = 25C) | ||||||
| EmitterBase Voltage | VEBO | 6 | V | |||
| Collector Current Continuous | IC | 100 | mA | |||
| CollectorEmitter Voltage | VCEO | 65 | V | |||
| CollectorBase Voltage | VCBO | 80 | V | |||
| Total Device Dissipation, FR5 Board | PD | 225 | mW | @ TA = 25C; Derate above 25C: 1.8 mW/C | ||
| Thermal Resistance, JunctiontoAmbient | RJA | 556 | C/W | |||
| Junction and Storage temperature | TJ,Tstg | -55 | +150 | C | ||
| ELECTRICAL CHARACTERISTICS (Ta= 25C) | ||||||
| OFF CHARACTERISTICS | ||||||
| CollectorEmitter Breakdown Voltage | VBR(CEO) | 65 | V | (IC = 10 mA) | ||
| CollectorEmitter Breakdown Voltage | VBR(CES) | V | (IC = 10 A, VEB = 0) | |||
| CollectorBase Breakdown Voltage | VBR(CBO) | 80 | V | (IC = 10 A) | ||
| EmitterBase Breakdown Voltage | VBR(EBO) | 6 | V | (IE = 1.0 A) | ||
| Collector Cutoff Current | ICBO | 5 | nA | (VCB = 30 V) | ||
| Collector Cutoff Current | ICBO | 80 | A | (VCB = 30 V, TA = 150C) | ||
| ON CHARACTERISTICS | ||||||
| DC Current Gain | HFE | 200 | 450 | (IC = 2.0 mA, VCE = 5.0 V) | ||
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.25 | V | (IC = 10 mA, IB = 0.5 mA) | ||
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.6 | V | (IC = 100 mA, IB = 5.0 mA) | ||
| BaseEmitter Saturation Voltage | VBE(sat) | 0.7 | V | (IC = 10 mA, IB = 0.5 mA) | ||
| BaseEmitter Saturation Voltage | VBE(sat) | 0.9 | V | (IC = 100 mA, IB = 5.0 mA) | ||
| BaseEmitter Voltage | VBE(on) | 580 | 770 | mV | (IC = 2.0 mA, VCE = 5.0 V) | |
| BaseEmitter Voltage | VBE(on) | 660 | 700 | mV | (IC = 10 mA, VCE = 5.0 V) | |
| SMALLSIGNAL CHARACTERISTICS | ||||||
| CurrentGain Bandwidth Product | fT | 100 | MHz | (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) | ||
| Output Capacitance | Cobo | 4.5 | pF | (VCB = 10 V, f = 1.0 MHz) | ||
| Noise Figure | NF | 10 | dB | (IC = 0.2 mA,VCE = 5.0 V, RS = 2.0 k f = 1.0 kHz, BW = 200 Hz) | ||
| DEVICE MARKING AND ORDERING INFORMATION | ||||||
| Model | Marking | Description | Package | Reel Size | Quantity | |
| LBC846BLT1G | 1B | General Purpose Transistors NPN Silicon | SOT23(TO-236) | 7" | 3000/Tape&Reel | |
| S-LBC846BLT1G | 1B | General Purpose Transistors NPN Silicon | SOT23(TO-236) | 7" | 3000/Tape&Reel | |
| LBC846BLT3G | 1B | General Purpose Transistors NPN Silicon | SOT23(TO-236) | 13" | 10000/Tape&Reel | |
2202171630_LRC-S-LBC846BLT1G_C383288.pdf
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