Surface mount dual transistor LRC LBC856ADW1T1G designed for amplifier circuits SOT363 SC88 package

Key Attributes
Model Number: LBC856ADW1T1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
380mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBC856ADW1T1G
Package:
SOT-363(SC-88)
Product Description

Product Overview

These dual general purpose transistors from LESHAN RADIO COMPANY, LTD. are designed for amplifier applications. Housed in the SOT363/SC88 package, they are suitable for low power surface mount applications.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Package: SOT363/SC88
  • Certifications: AEC-Q101 Qualified and PPAP Capable (for S- prefix)
  • RoHS Compliance: Declared

Technical Specifications

ModelVCEO (V)VCBO (V)VEBO (V)IC Continuous (mAdc)PD (mW) @ 25CRJA (C/W)TJ, Tstg (C)
BC856-65-80-5.0-100380328-55 to +150
BC857-45-50-5.0-100250328-55 to +150
BC858-30-30-5.0-100250328-55 to +150
CharacteristicSymbolLBC856 (Min/Typ/Max)LBC857 (Min/Typ/Max)LBC858 (Min/Typ/Max)Unit
CollectorEmitter Breakdown Voltage (IC = 10 mA)V(BR)CEO-65 / - / --45 / - / --30 / - / -V
CollectorEmitter Breakdown Voltage (IC = 10 A, VEB = 0)V(BR)CES-80 / - / --50 / - / --30 / - / -V
CollectorBase Breakdown Voltage (IC = 10 A)V(BR)CBO-80 / - / --50 / - / --30 / - / -V
EmitterBase Breakdown Voltage (IE = 1.0 A)V(BR)EBO-5.0 / - / --5.0 / - / --5.0 / - / -V
Collector Cutoff Current (VCB = 30 V)ICBO- / - / -15- / - / -15- / - / -15nA
Collector Cutoff Current (VCB = 30 V, TA = 150C)ICBO- / - / -4.0- / - / -4.0- / - / -4.0A
DC Current Gain (IC = 2.0 mA, VCE = 5.0 V)hFE- / 290-520 / -- / 290-520 / -- / 290-520 / --
DC Current Gain (IC = 10 mA, VCE = 5.0 V)hFE- / 150-270 / -- / 150-270 / -- / 150-270 / --
CollectorEmitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)VCE(sat)- / - / -0.3- / - / -0.3- / - / -0.3V
BaseEmitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)VBE(sat)- / - / -0.9- / - / -0.9- / - / -0.9V
BaseEmitter On Voltage (IC = 10 mA, VCE = 5.0 V)VBE(on)-0.6 / - / -0.82-0.6 / - / -0.82-0.6 / - / -0.82V
CurrentGain Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)fT100 / - / -100 / - / -100 / - / -MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz)Cob- / - / 4.5- / - / 4.5- / - / 4.5pF
Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz)NF- / - / 10- / - / 10- / - / 10dB

2410010130_LRC-LBC856ADW1T1G_C383194.pdf

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