Low RDS ON 20V P Channel MOSFET LRC LP2501DT1G designed for power management in DSC and load switch devices
Key Attributes
Model Number:
LP2501DT1G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
150mΩ@2.5V,2.0A
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 P-Channel
Input Capacitance(Ciss):
480pF
Output Capacitance(Coss):
46pF
Pd - Power Dissipation:
700mW
Gate Charge(Qg):
7.2nC@4.5V
Mfr. Part #:
LP2501DT1G
Package:
DFN-6L(2x2)
Product Description
Product Overview
The LESHAN RADIO COMPANY, LTD. LP2501DT1G is a 20V P-Channel Enhancement-Mode MOSFET designed for power management applications. It features a super high density cell design for extremely low RDS(ON), making it suitable for notebook power management, portable equipment, battery-powered systems, load switches, and DSCs. The material is Halogen Free and compliant with RoHS requirements.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material Compliance: Halogen Free, RoHS
Technical Specifications
| Model | Device Marking | RDS(ON) 110m@VGS=-4.5V | RDS(ON) 150m@VGS=-2.5V | Voltage Rating | Shipping |
|---|---|---|---|---|---|
| LP2501DT1G | 1B | Yes | Yes | 20V | 4000/Tape& Reel |
1806041210_LRC-LP2501DT1G_C172436.pdf
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