High power fast turn off thyristor Littelfuse IXYS P0366WC04B for demanding electronic applications

Key Attributes
Model Number: P0366WC04B
Product Custom Attributes
Holding Current (Ih):
600mA
Current - Gate Trigger(Igt):
200mA
Voltage - On State(Vtm):
1.88V
Current - On State(It(RMS)):
756A
Peak Off - State Voltage(Vdrm):
400V
SCR Type:
1 SCR
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
3V
Mfr. Part #:
P0366WC04B
Package:
TO-200AB
Product Description

Fast Turn-off Thyristor Types P0366WC04# & P0366WC08#

This datasheet details the P0366WC04# and P0366WC08# series of fast turn-off thyristors. These devices are designed for high-power applications requiring rapid switching capabilities and robust performance under demanding conditions. Their fast turn-off characteristics make them suitable for use in advanced power electronic systems where efficient and reliable operation is critical.

Product Attributes

  • Product Series: P0366WC04#, P0366WC08#

Technical Specifications

Parameter Rating Units Test Conditions
Repetitive peak off-state voltage (VDRM) 400-800 V Note 1
Non-repetitive peak off-state voltage (VDSM) 400-800 V Note 1
Repetitive peak reverse voltage (VRRM) 400-800 V Note 1
Non-repetitive peak reverse voltage (VRSM) 500-900 V Note 1
Mean on-state current (IT(AV)) 366 A Tsink=55C, Note 2
Mean on-state current (IT(AV)) 130 A Tsink=85C, Note 2
Nominal RMS on-state current (IT(RMS)) 756 A Tsink=25C, Note 2
D.C. on-state current (IT(d.c.)) 590 A Tsink=25C, Note 4
Peak non-repetitive surge (ITSM) tp=10ms 4700 A VRM=0.6VRRM, Note 5
Peak non-repetitive surge (ITSM2) tp=10ms 5170 A VRM10V, Note 5
I2t capacity for fusing (I2t) tp=10ms 11010 As VRM=0.6VRRM, Note 5
I2t capacity for fusing (I2t) tp=10ms 13410 As VRM10V, Note 5
Maximum rate of rise of on-state current (di/dt)cr (repetitive) 500 A/s Note 6
Maximum rate of rise of on-state current (di/dt)cr (non-repetitive) 1000 A/s Note 6
Peak forward gate voltage (VFGM) 12 V
Peak forward gate current (IFGM) 18 A
Peak reverse gate voltage (VRGM) 5 V
Mean forward gate power (PG(AV)) 1.5 W
Peak forward gate power (PGM) (100s pulse width) 60 W
Non-trigger gate voltage (VGD) 0.25 V Note 7
Operating temperature range (THS) -40 to +125 C
Storage temperature range (Tstg) -40 to +150 C
Maximum peak on-state voltage (VTM) 1.88 V ITM=715A
Threshold voltage (VT0) 1.4 V
Slope resistance (rT) 0.67 m
Critical rate of rise of off-state voltage ((dv/dt)cr) 200 V/s VD=80% VDRM
Peak off-state current (IDRM) 30 mA Rated VDRM
Peak reverse current (IRRM) 30 mA Rated VRRM
Gate trigger voltage (VGT) 3.0 V Tj=25C
Gate trigger current (IGT) 200 mA Tj=25C, VD=6V, IT=1A
Holding current (IH) 600 mA Tj=25C
Recovered charge (Qrr) 25 C ITM=300A, tp=500s, di/dt=20A/s, Vr=50V
Recovered charge, 50% Chord (Qra) 10 C
Turn-off time (tq) 15-30 s ITM=300A, tp=500s, di/dt=20A/s, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/s
Turn-off time (tq) 10-15 s ITM=300A, tp=500s, di/dt=50A/s, Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/s
Thermal resistance, junction to heatsink (RthJK) (Double side cooled) 0.095 K/W
Thermal resistance, junction to heatsink (RthJK) (Single side cooled) 0.190 K/W
Mounting force (F) 3.3-5.5 kN
Weight (Wt) 70 g

2506271131_Littelfuse-IXYS-P0366WC04B_C17489536.pdf

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