AEC Q101 qualified PNP transistor LRC L9015SLT1G offering stable operation in automotive circuits
Product Overview
The L9015 series are general-purpose PNP silicon transistors from LESHAN RADIO COMPANY, LTD. They are complementary to the L9014 and are available in SOT-23 packages. These transistors are suitable for various applications requiring reliable performance and are AEC-Q101 qualified for automotive and other demanding applications.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material: Silicon
- Certifications: RoHS compliant, AEC-Q101 Qualified (S-prefix)
Technical Specifications
| Symbol | Characteristic | L9015QLT1G Series | Unit | Notes |
| VCEO | Collector-Emitter Voltage | -45 | V | |
| VCBO | Collector-Base Voltage | -50 | V | |
| VEBO | Emitter-Base Voltage | -5 | V | |
| IC | Collector Current-Continuous | -100 | mA | |
| PD | Total Device Dissipation (FR-5 Board) | 225 | mW | Derate above 25C: 1.8 mW/C |
| RJA | Thermal Resistance, Junction to Ambient (FR-5 Board) | 556 | C/W | |
| PD | Total Device Dissipation (Alumina Substrate) | 300 | mW | Derate above 25C: 2.4 mW/C |
| RJA | Thermal Resistance, Junction to Ambient (Alumina Substrate) | 417 | C/W | |
| TJ, Tstg | Junction and Storage Temperature | -55 to +150 | C | |
| V(BR)CEO | Collector-Emitter Breakdown Voltage | -45 | V | IC=-1.0mA |
| V(BR)EBO | Emitter-Base Breakdown Voltage | -5 | V | IE=-100A |
| V(BR)CBO | Collector-Base Breakdown Voltage | -50 | V | IC=-100A |
| ICBO | Collector Cutoff Current | -100 | nA | VCB=-40V |
| IEBO | Emitter Cutoff Current | -100 | nA | VEB=-3V |
| hFE | DC Current Gain | 150-600 | IC=-1mA, VCE=-5V (Q/R/S variants: 150-300 / 200-400 / 300-600) | |
| VCE(sat) | Collector-Emitter Saturation Voltage | -0.3 | V | IC=-100mA, IB=-5mA |
1912111437_LRC-L9015SLT1G_C417294.pdf
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