Littelfuse IXYS DSEP60-06A fast recovery diode with very short recovery time and low leakage current

Key Attributes
Model Number: DSEP60-06A
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
600A
Reverse Leakage Current (Ir):
650uA@600V
Reverse Recovery Time (trr):
35ns
Operating Junction Temperature Range:
-55℃~+175℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
600V
Pd - Power Dissipation:
330W
Voltage - Forward(Vf@If):
2.33V@120A
Current - Rectified:
60A
Mfr. Part #:
DSEP60-06A
Package:
TO-247-2
Product Description

Product Overview

The DSEP60-06A is a high-performance fast recovery diode featuring low loss and soft recovery characteristics. Designed with planar passivated chips, it offers very low leakage current, very short recovery times, and improved thermal behavior with very low Irm-values. Its soft reverse recovery minimizes EMI/RFI, and low Irm reduces power dissipation and turn-on losses in commutating switches. This diode is ideal as an antiparallel diode for high-frequency switching devices, antisaturation diode, snubber diode, and free-wheeling diode, as well as for rectifiers in switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).

Product Attributes

  • Brand: IXYS
  • Package: TO-247
  • Certifications: RoHS compliant, Epoxy meets UL 94V-0
  • Product Marking: DHG60I600HA (for TO-247AD), DPH30IS600HI (for ISOPLUS247), DSEP60-06AT (for TO-268AA)

Technical Specifications

Symbol Definition Conditions Unit typ. max. min.
VRRM max. repetitive reverse blocking voltage TVJ = 25C V 600
VRSM max. non-repetitive reverse blocking voltage TVJ = 25C V 650
IR reverse current, drain current VR = 600V; TVJ = 25C A 150
IR reverse current, drain current VR = 600V; TVJ = 175C mA 2.5
VF forward voltage drop IF = 60A; TVJ = 25C V 1.39 1.70
VF0 threshold voltage IF = 120A; TVJ = 25C V 0.95
rF slope resistance for power loss calculation only IF = 120A; TVJ = 25C m 5
Ptot total power dissipation TC = 25C W 330
RthJC thermal resistance junction to case K/W 0.45
RthCH thermal resistance case to heatsink K/W 0.25
IF(AV) average forward current TC = 100C A 60
IFSM max. forward surge current t = 10 ms; (50 Hz), sine; TVJ = 45C A 600
CJ junction capacitance VR = 400V; f = 1 MHz; TVJ = 25C pF 130
trr reverse recovery time IF = 1A; VR = 30V; -dIF/dt = 200 A/s; TVJ = 100C ns 35
IRM max. reverse recovery current IF = 60A; VR = 30V; -dIF/dt = 200 A/s; TVJ = 100C A 8 13
Qr reverse recovery charge IF = 60A; VR = 30V; -dIF/dt = 200 A/s; TVJ = 100C nC 110
TVJ virtual junction temperature C 175 -55
Tstg storage temperature C 150 -55
V0 threshold voltage on die level V 0.95
R0 slope resistance on die level m 2.4
Weight g 6
Mounting torque Nm 1.2 0.8
Mounting force with clip N 120 70

Dimensions (TO-247):

Sym. Inches Millimeter
min. max. min. max.
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.430 BSC 10.92 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
P 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
P1 - 0.29 - 7.39

2410121933_Littelfuse-IXYS-DSEP60-06A_C426675.pdf

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