Littelfuse IXYS DSEP29-06A diode featuring very short recovery times and improved thermal performance

Key Attributes
Model Number: DSEP29-06A
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
250A
Reverse Leakage Current (Ir):
250uA@600V
Reverse Recovery Time (trr):
35ns
Operating Junction Temperature Range:
-55℃~+175℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
600V
Pd - Power Dissipation:
165W
Voltage - Forward(Vf@If):
1.94V@60A
Current - Rectified:
30A
Mfr. Part #:
DSEP29-06A
Package:
TO-220-2
Product Description

Product Overview

The DSEP29-06A is a high-performance fast recovery diode featuring low loss and soft recovery characteristics. Designed with planar passivated chips, it offers very low leakage current, very short recovery times, and improved thermal behavior. Its very low Irm-values and soft reverse recovery contribute to reduced power dissipation and lower turn-on losses in commutating switches, while also minimizing EMI/RFI. This diode is suitable for use as an antiparallel diode for high-frequency switching devices, antisaturation diode, snubber diode, and freewheeling diode. It is also utilized in rectifiers for switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).

Product Attributes

  • Brand: IXYS
  • Part Number: DSEP29-06A
  • Package: TO-220
  • RoHS Compliant
  • Epoxy meets UL 94V-0
  • Data according to IEC 60747

Technical Specifications

Symbol Definition Conditions Unit typ. max. min.
VRRM max. repetitive reverse blocking voltage TVJ = 25C V 600
VRSM max. non-repetitive reverse blocking voltage TVJ = 25C V 600
IF(AV) average forward current TC = 100C A 30
IFSM max. forward surge current t = 10 ms; (50 Hz), sine; TVJ = 45C A 600
VF forward voltage drop IF = 30 A; TVJ = 25C V 1.26 1.56
VF0 threshold voltage TVJ = 25C V 0.91
rF slope resistance for power loss calculation only IF = 60 A m 9.4
IR reverse current, drain current TVJ = 25C A 150
Ptot total power dissipation TC = 25C W 175
TJ virtual junction temperature C 175 -55
TStg storage temperature C 150 -55
RthJC thermal resistance junction to case K/W 0.50
RthCH thermal resistance case to heatsink K/W 0.50
CJ junction capacitance VR = 400 V; f = 1 MHz; TVJ = 25C pF 26
IRMS RMS current per terminal A 35
trr reverse recovery time IF = 30 A; VR = 300 V; -diF/dt = 200 A/s; TVJ = 100C ns 35
IRM max. reverse recovery current IF = 30 A; VR = 300 V; -diF/dt = 200 A/s; TVJ = 100C A 6
Qr reverse recovery charge IF = 30 A; VR = 300 V; -diF/dt = 200 A/s; TVJ = 100C C 10
Weight g 2.0
Mounting torque Nm 0.6 0.4
Mounting force with clip N 60

Dimensions (TO-220):

Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.32 4.82 0.170 0.190
A1 1.14 1.39 0.045 0.055
A2 2.29 2.79 0.090 0.110
b 0.64 1.01 0.025 0.040
b2 1.15 1.65 0.045 0.065
C 0.35 0.56 0.014 0.022
D 14.73 16.00 0.580 0.630
E 9.91 10.66 0.390 0.420
e 5.08 BSC 0.200 BSC
H1 5.85 6.85 0.230 0.270
L 12.70 13.97 0.500 0.550
L1 2.79 5.84 0.110 0.230
P 3.54 4.08 0.139 0.161
Q 2.54 3.18 0.100 0.125

2410121742_Littelfuse-IXYS-DSEP29-06A_C426666.pdf

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