NPN Silicon General Purpose Transistor LRC LMBT2222ALT1G with 225 Milliwatt Power Dissipation Rating
Key Attributes
Model Number:
LMBT2222ALT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
10uA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBT2222ALT1G
Package:
SOT-23
Product Description
Product Overview
The LMBT2222ALT1G and S-LMBT2222ALT1G are NPN Silicon General Purpose Transistors designed for automotive and other applications requiring unique site and control change requirements. The S- prefix variant is AEC-Q101 qualified and PPAP capable. These devices comply with RoHS requirements and are Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material: Silicon
- Certifications: RoHS, Halogen Free, AEC-Q101 (S- prefix only)
- Origin: Not specified
- Color: Not specified
Technical Specifications
| Model | Type | Description | VCEO (Vdc) | IC (mAdc) | VEBO (Vdc) | PD (mW) | RJA (C/W) | TJ,Tstg (C) |
| LMBT2222ALT1G | NPN Silicon | General Purpose Transistor | 40 | 600 | 6 | 225 | 556 | -55~+150 |
| S-LMBT2222ALT1G | NPN Silicon | General Purpose Transistor (AEC-Q101 Qualified) | 40 | 600 | 6 | 225 | 556 | -55~+150 |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
| CollectorEmitter Breakdown Voltage | VBR(CEO) | 40 | - | - | V | (IC = 10 mAdc, IB = 0) |
| CollectorBase Breakdown Voltage | VBR(CBO) | 75 | - | - | V | (IC = 10 Adc, IE = 0) |
| EmitterBase Breakdown Voltage | VBR(EBO) | 6 | - | - | V | (IE = 10 Adc, IC = 0) |
| Collector Cutoff Current | ICEX | - | - | 10 | nA | (VCE = 60 Vdc, VEB(off) = 3.0Vdc) |
| Collector Cutoff Current | ICBO | - | - | 0.01 | A | (VCB = 60 Vdc, IE = 0) |
| Collector Cutoff Current (TA=125C) | ICBO | - | - | 100 | nA | (VCB = 60 Vdc, IE = 0, TA = 125C) |
| Emitter Cutoff Current | IEBO | - | - | 10 | nA | (VEB = 3.0 Vdc, IC = 0) |
| Base Cutoff Current | IBL | - | - | 50 | nA | (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) |
| DC Current Gain | HFE | 35 | - | 300 | - | (See Electrical Characteristics Curves) |
| CollectorEmitter Saturation Voltage | VCE(sat) | - | - | 1.2 | V | (IC = 500 mAdc, IB = 50 mAdc) |
| BaseEmitter Saturation Voltage | VBE(sat) | - | - | 1.2 | V | (IC = 500 mAdc, IB = 50 mAdc) |
| CurrentGain Bandwidth Product | fT | 300 | - | - | MHz | (IC = 20mAdc, VCE= 20Vdc, f = 100MHz) |
| Output Capacitance | Cobo | - | - | 8 | pF | (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) |
| Input Capacitance | Cibo | - | - | 25 | pF | (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) |
| Delay Time | td | - | - | 10 | ns | (VCC = 30 Vdc,VEB=-0.5Vdc, IC = 150mAdc, IB1 = 15 mAdc) |
| Rise Time | tr | - | - | 25 | ns | (VCC = 30 Vdc,VEB=-0.5Vdc, IC = 150mAdc, IB1 = 15 mAdc) |
| Storage Time | ts | - | - | 225 | ns | (VCC = 30 Vdc, IC = 150 mAdc,IB1 = IB2 = 15 mAdc) |
| Fall Time | tf | - | - | 60 | ns | (VCC = 30 Vdc, IC = 150 mAdc,IB1 = IB2 = 15 mAdc) |
1809221816_LRC-LMBT2222ALT1G_C41429.pdf
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