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quality Littelfuse IXYS DSEI2X101-12A Fast Recovery Diode Optimized for Snubber and Antiparallel Applications factory
quality Littelfuse IXYS DSEI2X101-12A Fast Recovery Diode Optimized for Snubber and Antiparallel Applications factory

Littelfuse IXYS DSEI2X101-12A Fast Recovery Diode Optimized for Snubber and Antiparallel Applications

Key Attributes
Model Number: DSEI2X101-12A
Product Custom Attributes
Reverse Leakage Current (Ir):
3mA@1.2kV
Reverse Recovery Time (trr):
150ns
Operating Junction Temperature Range:
-40℃~+150℃
Diode Configuration:
2 Independent
Voltage - DC Reverse (Vr) (Max):
1.2kV
Voltage - Forward(Vf@If):
2.13V@200A
Current - Rectified:
91A
Mfr. Part #:
DSEI2X101-12A
Package:
SOT-227B
Product Description

Product Overview

The DSEI2x101-12A is a Fast Recovery Epitaxial Diode featuring parallel legs with low loss and soft recovery characteristics. Designed for high-frequency switching applications, it offers a very short recovery time, improved thermal behavior, and very low reverse recovery current (Irm) values. Its soft reverse recovery minimizes EMI/RFI and reduces power dissipation and turn-on losses in commutating switches. This diode is ideal as an antiparallel diode for high-frequency switching devices, antisaturation diode, snubber diode, and free-wheeling diode, as well as in rectifiers for switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).

Product Attributes

  • Brand: IXYS
  • Package: SOT-227B (minibloc)
  • Certifications: RoHS compliant, Epoxy meets UL 94V-0
  • Backside: Isolated
  • Base plate: Copper internally DCB isolated
  • Isolation Voltage: 3000 V~

Technical Specifications

Symbol Definition Conditions Unit min. typ. max.
VRRM max. repetitive reverse blocking voltage TVJ = 25C V 1200
VRMSM max. non-repetitive reverse blocking voltage TVJ = 25C V 1200
IF(AV) average forward current TC = 100C A 2x100
IFSM max. forward surge current t = 10 ms; (50 Hz), sine; TVJ = 45C A 900
VF forward voltage drop IF = 100 A; TVJ = 25C V 1.87 2.13
VF0 threshold voltage TVJ = 25C V 1.01
rF slope resistance for power loss calculation only TVJ = 25C m 6.1
Ptot total power dissipation TC = 25C W 250
RthJC thermal resistance junction to case K/W 0.5
RthCH thermal resistance case to heatsink K/W 0.10
trr reverse recovery time IF = 100 A; -diF/dt = 600 A/s; VR = 600 V; TVJ = 100C ns 40
IRM max. reverse recovery current IF = 100 A; -diF/dt = 600 A/s; VR = 600 V; TVJ = 100C A 52
Qrr reverse recovery charge IF = 100 A; -diF/dt = 600 A/s; VR = 600 V; TVJ = 100C C 38
CJ junction capacitance VR = 400 V; f = 1 MHz; TVJ = 25C pF 107
TVJ virtual junction temperature C -40 150
Tstg storage temperature C -40 150
VISOL isolation voltage 50/60 Hz, RMS; I 1 mA; t = 1 minute V 3000
Mounting torque Nm 1.1 1.5
Terminal torque Nm 1.1 1.5
Weight g 30

2410121742_Littelfuse-IXYS-DSEI2X101-12A_C425670.pdf

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