Dual General Purpose NPN Transistors LRC LBC846BDW1T1G Suitable for Various Electronic Applications
Key Attributes
Model Number:
LBC846BDW1T1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
380mW
Transition Frequency(fT):
770MHz
Type:
NPN
Number:
2 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBC846BDW1T1G
Package:
SC-88
Product Description
Product Overview
The LBC846BDW1T1G and S-LBC846BDW1T1G are dual general-purpose NPN transistors designed for automotive and other applications requiring unique site and control change requirements. The S-prefix variants are AEC-Q101 qualified and PPAP capable. These transistors are compliant with RoHS requirements and Halogen Free materials.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Certifications: RoHS, Halogen Free, AEC-Q101 (S-prefix variants)
- Material Compliance: RoHS, Halogen Free
Technical Specifications
| Part Number | S-Part Number | Description | Collector-Emitter Voltage (VCEO) | Collector Current (IC) | Emitter-Base Voltage (VEBO) | Total Device Dissipation (PD) | Thermal Resistance (RJA) |
| LBC846BDW1T1G | S-LBC846BDW1T1G | Dual General Purpose Transistors NPN Duals | 65 V | 100 mA | 6 V | 380 mW (@ TA = 25C) | 250 C/W |
| LBC846BDW1T3G | S-LBC846BDW1T3G | Dual General Purpose Transistors NPN Duals | 65 V | 100 mA | 6 V | 380 mW (@ TA = 25C) | 250 C/W |
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
| Collector-Emitter Breakdown Voltage (IC = 10 mA) | VBR(CEO) | 65 | - | - | V |
| Collector-Emitter Breakdown Voltage (IC = 10 A, VEB = 0) | VBR(CES) | 80 | - | - | V |
| Collector-Base Breakdown Voltage (IC = 10 A) | VBR(CBO) | 80 | - | - | V |
| Emitter-Base Breakdown Voltage (IE = 1.0 A) | VBR(EBO) | - | - | 6 | V |
| Collector-Base Cutoff Current (VCB = 30 V) | ICBO | - | - | 4.5 | nA |
| Collector-Base Cutoff Current (VCB = 30 V, TA = 150C) | ICBO | - | - | 15 | A |
| DC Current Gain (IC = 2.0 mA, VCE = 5 V) | HFE | 200 | 450 | - | - |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VCE(sat) | - | 0.25 | - | V |
| Collector-Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) | VCE(sat) | - | 0.7 | - | V |
| Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VBE(sat) | - | 0.9 | - | V |
| Base-Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) | VBE(sat) | - | 1.1 | - | V |
| Base-Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) | VBE(on) | - | 0.6 | - | V |
| Base-Emitter Voltage (IC = 10 mA, VCE = 5.0 V) | VBE(on) | - | 0.7 | - | V |
| Current-Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) | fT | 580 | 660 | 700 | MHz |
| Output Capacitance (VCB = 10 V, f = 1.0 MHz) | Cobo | - | - | 15 | pF |
| Noise Figure (IC= 0.2 mA, VCE=5.0 V, RS=2.0 k, f = 1.0 kHz,BW = 200 Hz) | NF | - | - | 10 | dB |
1912111437_LRC-LBC846BDW1T1G_C383189.pdf
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