Silicon NPN General Purpose Transistor LRC LBC847BLT1G with High ESD Rating and Moisture Sensitivity Level 1
Key Attributes
Model Number:
LBC847BLT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBC847BLT1G
Package:
SOT-23
Product Description
LESHAN RADIO COMPANY, LTD. LBC846ALT1G Series NPN Silicon General Purpose Transistors
The LBC846ALT1G Series are NPN silicon general purpose transistors designed for various applications. They feature moisture sensitivity level 1 and high ESD ratings. The S-prefix variants are qualified for automotive and other applications requiring unique site and control change requirements, meeting AEC-Q101 standards and being PPAP capable.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material: Silicon
- Certifications: AEC-Q101 Qualified (S-prefix variants)
- RoHS Compliance: Declared
Technical Specifications
| Series | Device Marking | CollectorEmitter Voltage (VCEO) [Vdc] | CollectorBase Voltage (VCBO) [Vdc] | EmitterBase Voltage (VEBO) [Vdc] | Collector Current (IC) [mAdc] | Total Device Dissipation (PD) [mW] | Thermal Resistance (RJA) [C/W] | Junction and Storage Temperature Range [C] |
| LBC846ALT1G Series | LBC846A, LBC846B | 65 | 80 | 6.0 | 100 | 225 (FR-5) / 300 (Alumina) | 556 (FR-5) / 417 (Alumina) | 55 to +150 |
| LBC846ALT1G Series | LBC847, LBC850 | 45 | 50 | 6.0 | 100 | 225 (FR-5) / 300 (Alumina) | 556 (FR-5) / 417 (Alumina) | 55 to +150 |
| LBC846ALT1G Series | LBC848, LBC849 | 30 | 30 | 5.0 | 100 | 225 (FR-5) / 300 (Alumina) | 556 (FR-5) / 417 (Alumina) | 55 to +150 |
| S-LBC846ALT1G Series | (Automotive Qualified) | 65 | 80 | 6.0 | 100 | 225 (FR-5) / 300 (Alumina) | 556 (FR-5) / 417 (Alumina) | 55 to +150 |
Electrical Characteristics
| Characteristic | Symbol | LBC846A,B | LBC847A,B,C, LBC850B,C | LBC848A,B,C, LBC849B,C | Unit | Conditions |
| CollectorEmitter Breakdown Voltage | V(BR)CEO | 65 | 45 | 30 | Vdc | IC = 10 mA |
| CollectorEmitter Breakdown Voltage | V(BR)CES | 80 | 50 | 30 | Vdc | IC = 10 A, VEB = 0 |
| CollectorBase Breakdown Voltage | V(BR)CBO | 80 | 50 | 30 | Vdc | IC = 10 A |
| EmitterBase Breakdown Voltage | V(BR)EBO | 6.0 | 6.0 | 5.0 | Vdc | IE = 1.0 mA |
| Collector Cutoff Current | ICBO | 15 (nA) / 5.0 (A) | nA / A | VCB = 30 V / VCB = 30 V, TA = 150C | ||
| DC Current Gain | hFE | 110200 | 180450 | 220800 | IC = 2.0 mA, VCE = 5.0 V | |
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.25 | 0.6 | V | IC = 10 mA, IB = 0.5 mA | |
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.25 | 0.6 | V | IC = 100 mA, IB = 5.0 mA | |
| BaseEmitter Saturation Voltage | VBE(sat) | 0.70.9 | 0.70.9 | V | IC = 10 mA, IB = 0.5 mA | |
| BaseEmitter Saturation Voltage | VBE(sat) | 0.70.9 | 0.70.9 | V | IC = 100 mA, IB = 5.0 mA | |
| BaseEmitter Voltage | VBE(on) | 580660 | 700770 | mV | IC = 2.0 mA, VCE = 5.0 V | |
| BaseEmitter Voltage | VBE(on) | 580660 | 700770 | mV | IC = 10 mA, VCE = 5.0 V | |
| CurrentGain Bandwidth Product | fT | 100 | MHz | IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz | ||
| Output Capacitance | Cobo | 4.5 | pF | VCB = 10 V, f = 1.0 MHz | ||
| Noise Figure | NF | 4.0 | 10 | dB | IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz |
2304140030_LRC-LBC847BLT1G_C131853.pdf
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