Littelfuse IXYS DH40-18A diode featuring short recovery times and low leakage current for switching

Key Attributes
Model Number: DH40-18A
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
400A
Reverse Leakage Current (Ir):
100uA@1.8kV
Reverse Recovery Time (trr):
300ns
Operating Junction Temperature Range:
-55℃~+150℃
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
1.8kV
Pd - Power Dissipation:
280W
Voltage - Forward(Vf@If):
2.56V@80A
Current - Rectified:
40A
Mfr. Part #:
DH40-18A
Package:
TO-247-2
Product Description

Product Overview

The DH40-18A is a high-performance fast recovery diode designed for low loss and soft recovery applications. Featuring planar passivated chips, it offers very low leakage current, very short recovery times, and improved thermal behavior. Its very low Irm-values and soft reverse recovery characteristics contribute to reduced power dissipation and turn-on losses in commutating switches, minimizing EMI/RFI. The diode is avalanche voltage rated for reliable operation and is suitable for use as an antiparallel diode for high-frequency switching devices, antisaturation diode, snubber diode, and freewheeling diode. It is also utilized in rectifiers for switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).

Product Attributes

  • Brand: IXYS
  • Part Number: DH40-18A
  • Package: TO-247 (Industry standard outline, RoHS compliant, Epoxy meets UL 94V-0)
  • Certifications: RoHS compliant
  • Material: Planar passivated chips

Technical Specifications

Symbol Definition Conditions Unit Min. Typ. Max.
VRRM Max. repetitive reverse blocking voltage TVJ = 25C V 1800
IFAV Average forward current TC = 25C A 40
VF0 Threshold voltage TVJ = 25C V 1.38
rF Slope resistance for power loss calculation only TVJ = 25C m 17.5
IR Reverse current VR = 1800 V, TVJ = 25C A 125
IR Reverse current VR = 1800 V, TVJ = 125C mA 0.45
VF Forward voltage drop IF = 40 A, TVJ = 25C V 2.06 2.56
VF Forward voltage drop IF = 80 A, TVJ = 25C V 2.79
Ptot Total power dissipation TC = 25C W 280
RthJC Thermal resistance junction to case K/W 0.45
RthCH Thermal resistance case to heatsink K/W 0.25
IFSM Max. forward surge current t = 10 ms; (50 Hz), sine; TVJ = 45C A 1800
CJ Junction capacitance VR = 900 V, f = 1 MHz, TVJ = 25C pF 19
TVJ Virtual junction temperature C -55 150
Tstg Storage temperature C -55 150
IRMS RMS current per terminal A 70 125
Mounting torque Nm 0.8 1.2
Weight g 6

Note: Data according to IEC 60747 and per semiconductor unless otherwise specified. IXYS reserves the right to change limits, conditions and dimensions.


2410121916_Littelfuse-IXYS-DH40-18A_C444861.pdf

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