Dual NPN transistors LRC S-LBC817-25DMT1G engineered for operation in various electronic applications
Key Attributes
Model Number:
S-LBC817-25DMT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
370mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S-LBC817-25DMT1G
Package:
SOT-23-6
Product Description
Product Overview
Dual General Purpose Transistors designed for various electronic applications. These NPN transistors offer reliable performance with key electrical characteristics for both ON and OFF states, as well as small-signal parameters.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Certifications: AEC-Q101 Qualified and PPAP Capable (for S- Prefix)
- Compliance: RoHS
Technical Specifications
| Characteristic | Symbol | LBC817-16 | LBC817-25 | LBC817-40 | Unit | Conditions |
| MAXIMUM RATINGS | ||||||
| CollectorEmitter Voltage | V CEO | 45 | 45 | 45 | V | |
| CollectorBase Voltage | V CBO | 50 | 50 | 50 | V | |
| EmitterBase Voltage | V EBO | 5.0 | 5.0 | 5.0 | V | |
| Collector Current Continuous | I C | 500 | 500 | 500 | mAdc | |
| THERMAL CHARACTERISTICS | ||||||
| Total Device Dissipation (FR5 Board) | P D | 370 @ 25C (Derate 3.0 mW/C above 25C) | mW | |||
| Thermal Resistance, Junction to Ambient (FR5 Board) | R JA | 333 | C/W | |||
| Total Device Dissipation (Alumina Substrate) | P D | 600 @ 25C (Derate 4.8 mW/C above 25C) | mW | |||
| Thermal Resistance, Junction to Ambient (Alumina Substrate) | R JA | 208 | C/W | |||
| Junction and Storage Temperature | T J , T stg | 55 to +150 | C | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| CollectorEmitter Breakdown Voltage | V (BR)CEO | 45 | V | (IC = 10 mA) | ||
| CollectorEmitter Breakdown Voltage | V (BR)CES | 50 | V | (VEB = 0, IC = 10 A) | ||
| EmitterBase Breakdown Voltage | V (BR)EBO | 5.0 | V | (IE = 1.0 A) | ||
| Collector Cutoff Current | I CBO | 100 | nA | (VCB = 20 V) | ||
| Collector Cutoff Current | I CBO | 5.0 | A | (VCB = 20 V, TA = 150C) | ||
| ON CHARACTERISTICS | ||||||
| DC Current Gain | h FE | 100 250 | 160 400 | 250 600 | (IC = 100 mA, V CE = 1.0 V) | |
| CollectorEmitter Saturation Voltage | V CE(sat) | 0.7 | V | (IC = 500 mA, IB = 50 mA) | ||
| BaseEmitter On Voltage | V BE(on) | 1.2 | V | ( IC = 500 mA, V CE = 1.0 V) | ||
| SMALLSIGNAL CHARACTERISTICS | ||||||
| CurrentGain Bandwidth Product | f T | 100 | MHz | ( IC = 10 mA, V CE = 5.0 V dc, f = 100 MHz) | ||
| Output Capacitance | C obo | 10 | pF | (V CB = 10 V, f = 1.0 MHz) | ||
2303301000_LRC-S-LBC817-25DMT1G_C5383068.pdf
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