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quality NPN silicon transistor LRC LMUN2231LT1G featuring monolithic resistor networks and compact design for space saving circuits factory
quality NPN silicon transistor LRC LMUN2231LT1G featuring monolithic resistor networks and compact design for space saving circuits factory

NPN silicon transistor LRC LMUN2231LT1G featuring monolithic resistor networks and compact design for space saving circuits

Key Attributes
Model Number: LMUN2231LT1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
2.9kΩ
Resistor Ratio:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
LMUN2231LT1G
Package:
SOT-23
Product Description

Product Overview

The LMUN2231LT1G and S-LMUN2231LT1G are NPN silicon surface mount transistors featuring integrated monolithic bias resistor networks. These devices simplify circuit design, reduce board space, and decrease component count. They are suitable for automotive and other applications requiring unique site and control change requirements, with the S- prefix models being AEC-Q101 qualified and PPAP capable. The transistors are compliant with RoHS requirements and Halogen Free.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS requirements and Halogen Free
  • Qualification: AEC-Q101 qualified and PPAP capable (for S- prefix models)
  • Package Type: SOT23 (TO-236)
  • Transistor Type: NPN Silicon

Technical Specifications

Model Device Marking R1 (K) R2 (K) Shipping Collector-Base Voltage (VCBO) Collector-Emitter Voltage (VCEO) Collector Current (IC) - Continuous Total Device Dissipation (PD) Thermal Resistance (RJA) Junction & Storage Temperature (TJ, Tstg) Input Voltage Range (Vin)
LMUN2231LT1G A8H 2.2 2.2 3000/Tape&Reel 50 V 50 V 100 mA 1.5 W (@ TA = 25C on FR-5 Board) 67 C/W (on FR-5 Board) -55 ~ +150 C -10 ~ +12 V
S-LMUN2231LT1G A8H 2.2 2.2 10000/Tape&Reel 50 V 50 V 100 mA 1.5 W (@ TA = 25C on FR-5 Board) 67 C/W (on FR-5 Board) -55 ~ +150 C -10 ~ +12 V
LMUN2231LT3G A8H 2.2 2.2 10000/Tape&Reel 50 V 50 V 100 mA 1.5 W (@ TA = 25C on FR-5 Board) 67 C/W (on FR-5 Board) -55 ~ +150 C -10 ~ +12 V
Characteristic Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) VBR(CEO) 50 - - V
Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) VBR(CBO) 50 - - V
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nA
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 nA
Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO - - 100 nA
ON CHARACTERISTICS (Note 2.)
DC Current Gain (IC = 5.0 mA, VCE = 10 V) HFE - - 2.3 -
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 5 mA) VCE(sat) - - 0.25 V
Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL =1.0K) VOL - - 0.2 V
Output Voltage (on) (VCC = 5.0 V, VB = 0.25 V, RL =1.0K) VOH - - 0.8 V
Input Resistor R1 - 2.2 - K
Resistor Ratio R1/R2 - 1.0 - -
Dimension Millimeters (Min) Millimeters (Nom) Millimeters (Max) Inches (Min) Inches (Nom) Inches (Max)
A 0.89 1.0 1.11 0.035 0.039 0.044
A1 0.01 0.06 0.1 0.001 0.002 0.004
b 0.37 0.44 0.5 0.015 0.017 0.020
c 0.09 0.13 0.18 0.003 0.005 0.007
D 2.80 2.9 3.04 0.110 0.114 0.120
E 1.20 1.3 1.4 0.047 0.051 0.055
e 1.78 1.9 2.04 0.070 0.075 0.080
HE 2.10 2.4 2.64 0.083 0.094 0.104
L 0.10 0.2 0.3 0.004 0.008 0.012
L1 0.35 0.54 0.69 0.014 0.021 0.027

2410010101_LRC-LMUN2231LT1G_C2916240.pdf

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