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quality DMA150E1600NA rectifier by Littelfuse IXYS featuring planar passivated chips and low forward voltage drop factory
quality DMA150E1600NA rectifier by Littelfuse IXYS featuring planar passivated chips and low forward voltage drop factory

DMA150E1600NA rectifier by Littelfuse IXYS featuring planar passivated chips and low forward voltage drop

Key Attributes
Model Number: DMA150E1600NA
Product Custom Attributes
Mfr. Part #:
DMA150E1600NA
Package:
SOT-227B
Product Description

Product Overview

The DMA150E1600NA is a single diode standard rectifier from IXYS, designed for main rectification and suitable for single and three-phase bridge configurations. It features planar passivated chips, very low leakage current, and a very low forward voltage drop, contributing to improved thermal behavior. The rectifier is housed in a SOT-227B (minibloc) package, an industry-standard outline that is RoHS compliant. Its advanced power cycling capabilities and high isolation voltage make it a reliable component for demanding applications.

Product Attributes

  • Brand: IXYS
  • Part Number: DMA150E1600NA
  • Package: SOT-227B (minibloc)
  • Chip Technology: Planar passivated
  • Compliance: RoHS compliant, Epoxy meets UL 94V-0
  • Base Plate: Copper internally DCB isolated
  • Mounting Torque: 1.5 Nm
  • Terminal Torque: 1.5 Nm

Technical Specifications

Symbol Definition Conditions min. typ. max. Unit
VRRM max. repetitive reverse blocking voltage TJ = 25C 1600 V
VRSM max. non-repetitive reverse blocking voltage TJ = 25C 1700 V
IF(AV) average forward current TC = 150C 150 A
IFSM max. forward surge current t = 10 ms; (50 Hz), sine TVJ = 45C 3.00 kA
t = 8,3 ms; (60 Hz), sine TVJ = 45C 2.76 kA
It value for fusing t = 10 ms; (50 Hz), sine TVJ = 45C 45.0 kAs
t = 8,3 ms; (60 Hz), sine TVJ = 45C 43.7 kAs
VF forward voltage drop IF = 150 A; TVJ = 25C 1.05 V
IF = 300 A; TVJ = 25C 1.33 V
VF0 threshold voltage TVJ = 25C 0.78 V
rF slope resistance for power loss calculation only TVJ = 25C 1.8 m
IR reverse current VR = 1600 V; TVJ = 25C 125 A
VR = 1600 V; TVJ = 150C 1000 A
CJ junction capacitance VR = 400 V; f = 1 MHz 60 pF
Ptot total power dissipation TC = 25C 620 W
thJC thermal resistance junction to case Rectifier 0.2 K/W
thCH thermal resistance case to heatsink 0.1 K/W
TVJ virtual junction temperature -40 150 C
Tstg storage temperature -40 150 C
Isolation Voltage V ~ t = 1 second 3000 V~
dSpb/Apb striking distance through air 10.5 mm
dSpp/App creepage distance on surface 8.6 mm
Terminal to backside 3.2 mm

2412061703_Littelfuse-IXYS-DMA150E1600NA_C17618259.pdf

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