NPN Silicon Transistor LRC LMUN5213DW1T1G Featuring Monolithic Bias Resistor Network for Compact Circuit Designs
Key Attributes
Model Number:
LMUN5213DW1T1G
Product Custom Attributes
Emitter-Base Voltage VEBO:
6V
Output Voltage(VO(on)):
200mV@5V,3.5V
Input Resistor:
47kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
LMUN5213DW1T1G
Package:
SC-88
Product Description
Product Overview
The LMUN5213DW1T1G and S-LMUN5213DW1T1G are NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Networks. These devices are designed to simplify circuit design, reduce board space, and decrease component count. They are RoHS compliant and Halogen Free. The 'S-' prefix variant is qualified for automotive and other applications requiring unique site and control change requirements, being AEC-Q101 qualified and PPAP capable.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements and Halogen Free.
- Qualification (S- prefix): AEC-Q101 qualified and PPAP capable.
- Package Type: SC88(SOT-363)
- Device Marking: LMUN5213DW1T1G (7C), S-LMUN5213DW1T1G (7C)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta = 25C) | |||||
| CollectorBase Voltage | VCBO | - | - | 50 | V |
| Collector Current Continuous | IC | - | - | 100 | mA |
| CollectorEmitter Voltage | VCEO | - | - | 50 | V |
| EmitterBase Breakdown Voltage | VEBO | - | - | 6 | V |
| THERMAL CHARACTERISTICS | |||||
| Total Device Dissipation, (Note 1) @ TA = 25C | PD | - | - | 250 | mW |
| Derate above 25C | - | - | 1.5 | mW/C | |
| Thermal Resistance, JunctiontoAmbient(Note 1) | RJA | - | 493 | - | C/W |
| Thermal Resistance, JunctiontoLead(Note 1) | RJL | - | 188 | - | C/W |
| Junction and Storage temperature | TJ,Tstg | -55 | - | 150 | C |
| ELECTRICAL CHARACTERISTICS (Ta= 25C) | |||||
| OFF CHARACTERISTICS | |||||
| CollectorEmitter Breakdown Voltage (IC = 2.0 mA, IB = 0) | VBR(CEO) | 50 | - | - | V |
| CollectorBase Breakdown Voltage (IC = 10 A, IE = 0) | VBR(CBO) | 50 | - | - | V |
| Collector-Base Cutoff Current (VCB = 50 V, IE = 0) | ICBO | - | - | 100 | nA |
| Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) | ICEO | - | - | 500 | nA |
| Emitter-Base Breakdown Voltage (IE = 200 A, IC = 0) | VBR(EBO) | 6 | - | - | V |
| ON CHARACTERISTICS (Note 2) | |||||
| DC Current Gain (IC = 5.0 mA, VCE = 10 V) | HFE | 80 | - | 140 | - |
| CollectorEmitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) | VCE(sat) | - | - | 0.25 | V |
| Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL =1.0K) | VOL | - | - | 0.2 | V |
| Output Voltage (on) (VCC = 5.0 V, VB = 0.5 V, RL =1.0K) | VOH | - | - | 0.8 | V |
| Input Resistor | R1 | 32.9 | 47 | 61.1 | K |
| Resistor Ratio | R1/R2 | 0.8 | 1 | 1.2 | - |
| Model | R1(K) | R2(K) | Shipping |
|---|---|---|---|
| LMUN5213DW1T1G | 47 | 47 | 3000/Tape&Reel |
| LMUN5213DW1T3G | 47 | 47 | 10000/Tape&Reel |
| S-LMUN5213DW1T1G | 47 | 47 | 3000/Tape&Reel |
| Dimension | Min (mm) | Nom (mm) | Max (mm) | Min (in) | Nom (in) | Max (in) |
|---|---|---|---|---|---|---|
| A | - | - | 1.10 | - | - | 0.043 |
| A1 | 0 | - | 0.10 | 0 | - | 0.004 |
| b | 0.15 | 0.20 | 0.25 | 0.006 | 0.008 | 0.01 |
| c | 0.08 | 0.15 | 0.22 | 0.003 | 0.006 | 0.009 |
| D | 1.80 | 2.00 | 2.20 | 0.07 | 0.078 | 0.086 |
| E | 2.00 | 2.10 | 2.20 | 0.078 | 0.082 | 0.086 |
| E1 | 1.15 | 1.25 | 1.35 | 0.045 | 0.049 | 0.053 |
| L | 0.26 | 0.36 | 0.46 | 0.010 | 0.014 | 0.018 |
| e | 0.65 | - | - | 0.026 | - | - |
| aaa | 0.15 | - | 0.30 | 0.006 | - | 0.012 |
| bbb | - | - | 0.10 | - | - | 0.004 |
| ccc | - | - | 0.10 | - | - | 0.004 |
| ddd | - | - | 0.10 | - | - | 0.004 |
2410010101_LRC-LMUN5213DW1T1G_C2846994.pdf
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