General purpose NPN silicon transistor LRC LMBT2222ATT1G in SC89 package for amplifier applications
Key Attributes
Model Number:
LMBT2222ATT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
250MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBT2222ATT1G
Package:
SC-89
Product Description
Product Overview
The LMBT2222ATT1G is a general-purpose NPN silicon transistor designed for amplifier applications. It is housed in a low-power surface-mount SC-89 package.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material: Silicon
- Package: SC-89
- Certifications: AEC-Q101 Qualified, PPAP Capable, RoHS compliant
- Special Feature: S- Prefix for Automotive and Other Applications Requiring Unique Site
Technical Specifications
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| MAXIMUM RATINGS (TA = 25C) | ||||
| CollectorEmitter Voltage | VCEO | 40 | Vdc | |
| CollectorBase Voltage | VCBO | 75 | Vdc | |
| EmitterBase Voltage | VEBO | 6.0 | Vdc | |
| Collector Current Continuous | IC | 600 | mAdc | |
| Total Device Dissipation (Note 1) TA = 25C | PD | 150 | mW | |
| Thermal Resistance, JunctiontoAmbient | R JA | 833 | C/W | |
| Operating and Storage Junction Temperature Range | TJ, Tstg | 55 | +150 | C |
| OFF CHARACTERISTICS (TA = 25C unless otherwise noted) | ||||
| CollectorEmitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) | V(BR)CEO | 40 | Vdc | |
| CollectorBase Breakdown Voltage (IC = 10 Adc, IE = 0) | V(BR)CBO | 75 | Vdc | |
| EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) | V(BR)EBO | 6.0 | Vdc | |
| Base Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) | IBL | 20 | nAdc | |
| Collector Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) | ICEX | 100 | nAdc | |
| ON CHARACTERISTICS (Note 2) | ||||
| DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) | HFE | 35 | ||
| (IC = 1.0 mAdc, VCE = 10 Vdc) | 50 | |||
| (IC = 10 mAdc, VCE = 10 Vdc) | 75 | |||
| (IC = 150 mAdc, VCE = 10 Vdc) | 100 | |||
| (IC = 500 mAdc, VCE = 10 Vdc) | ||||
| CollectorEmitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) | VCE(sat) | 0.3 | Vdc | |
| (IC = 500 mAdc, IB = 50 mAdc) | 1.0 | Vdc | ||
| BaseEmitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) | VBE(sat) | 0.6 | Vdc | |
| (IC = 500 mAdc, IB = 50 mAdc) | 1.2 | 2.0 | Vdc | |
| SMALLSIGNAL CHARACTERISTICS | ||||
| CurrentGain Bandwidth Product (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) | fT | 250 | MHz | |
| Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) | Cobo | 8.0 | pF | |
| Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) | Cibo | 30 | pF | |
| Input Impedance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) | hie | 0.25 | 1.25 | k |
| Voltage Feedback Ratio (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) | hre | 4.0 X 104 | ||
| SmallSignal Current Gain (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) | hfe | 75 | 375 | |
| Output Admittance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) | hoe | 25 | 200 | mhos |
| Noise Figure (VCE = 10 Vdc, IC = 100 Adc, RS = 1.0 k ohms, f = 1.0 kHz) | NF | 4.0 | dB | |
| SWITCHING CHARACTERISTICS | ||||
| Delay Time (VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) | td | 10 | ns | |
| Rise Time | tr | 25 | ||
| Storage Time (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) | ts | 225 | ns | |
| Fall Time | tf | 60 | ||
1810010224_LRC-LMBT2222ATT1G_C133096.pdf
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