NPN Silicon Transistor LRC LBTN660Z4TZHG with Collector Emitter Voltage 60 Volts and RoHS Compliance
Key Attributes
Model Number:
LBTN660Z4TZHG
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
833mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
6A
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBTN660Z4TZHG
Package:
SOT-223
Product Description
Product Overview
The LBTN660Z4TZHG and S-LBTN660Z4TZHG are NPN Silicon General Purpose Transistors designed for automotive and other applications requiring unique site and control change requirements. The S-prefix variant is AEC-Q101 qualified and PPAP capable. These transistors are compliant with RoHS requirements and Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD. (LRC)
- Material Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified (S-prefix)
- Packaging: SOT223
Technical Specifications
| Parameter | Symbol | LBTN660Z4TZHG | S-LBTN660Z4TZHG | Unit |
|---|---|---|---|---|
| MAXIMUM RATINGS (Ta = 25C) | ||||
| CollectorEmitter Voltage | VCEO | 60 | V | |
| CollectorBase Voltage | VCBO | 100 | V | |
| EmitterBase Voltage | VEBO | 6 | V | |
| Collector Current Continuous | IC | 6 | A | |
| Peak collector current | ICM | 12 | A | |
| Junction and Storage temperature | TJ,Tstg | 55+150 | C | |
| Total Device Dissipation, FR4 Board (Note 1) @ TA = 25C | PD | 833 | mW | |
| Thermal Resistance, JunctiontoAmbient(Note 1) | RJA | 150 | C/W | |
| ELECTRICAL CHARACTERISTICS (Ta= 25C) | ||||
| CollectorEmitter Breakdown Voltage (IC=10mA,IB=0) | VBR(CEO) | 60 | V | |
| CollectorBase Breakdown Voltage (IC=100A,IE=0) | VBR(CBO) | 100 | V | |
| EmitterBase Breakdown Voltage (IE=100A,IC=0) | VBR(EBO) | 6 | V | |
| Collector-Base cut-off current (VCB = 100 V, IE = 0) | ICBO | - | - | 100 nA |
| Emitter-Base cut-off current (VEB =6V, IC =0) | IEBO | - | - | 100 nA |
| Collector-Emitter cutoff Current (IB=0, VCE = 60V) | ICEO | - | - | 100 nA |
| DC Current Gain (VCE = 2 V,IC = 500mA) | HFE | 120 | 360 | |
| (VCE = 2 V,IC = 1A) | ||||
| (VCE = 2 V,IC = 2A) | ||||
| (VCE = 2 V,IC = 6A) | ||||
| CollectorEmitter Saturation Voltage (IC=100mA,IB=2mA) | VCE(sat) | 0.9 | V | |
| (IC=1A,IB=100mA) | ||||
| (IC=2A,IB=200mA) | ||||
| (IC=3A,IB=60mA) | ||||
| (IC=6A,IB=600mA) | ||||
| Base-Emitter saturation voltage(Note 2) (IC=1A, IB=100mA) | VBE(sat) | - | - | V |
| Transition Frequency (VCE = 10 V, IC = 500 mA,f = 1 MHz) | fT | - | - | 400 MHz |
| Input Capacitance (VEB = 5.0 V, f = 1.0 MHz) | Cibo | - | - | 120 pF |
| Output Capacitance (VCB = 10 V, f = 1.0 MHz) | Cobo | - | - | 36 pF |
2212131830_LRC-LBTN660Z4TZHG_C5273335.pdf
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