Industrial N Channel Trench MOSFET MagnaChip Semicon MDES14N045RH with Low Rds on and Fast Switching
Key Attributes
Model Number:
MDES14N045RH
Product Custom Attributes
Drain To Source Voltage:
135V
Current - Continuous Drain(Id):
180A
RDS(on):
3.8mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3.9V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
27pF
Output Capacitance(Coss):
923pF
Input Capacitance(Ciss):
9.267nF
Gate Charge(Qg):
123nC@10V
Mfr. Part #:
MDES14N045RH
Package:
D2PAK-7L
Product Description
Product Overview
The MDES14N045RH is Magnachip's latest generation of MV MOSFET Technology, offering high performance with the lowest Rds(on), fast switching capabilities, and excellent quality. This single N-channel trench MOSFET is designed for industrial applications including low power drives for e-bikes, light electric vehicles, DC/DC converters, and general-purpose applications.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Part Number: MDES14N045RH
- Package: TO-263-7P
- RoHS Status: Halogen Free
- Certifications: 100% UIL Tested, 100% Rg Tested, 100% VDS Tested
Technical Specifications
| Characteristics | Symbol | Rating | Unit | Test Condition | Min | Typ | Max |
| Absolute Maximum Ratings | VDSS | 135 | V | (TJ = 25 oC) | |||
| VGSS | ±20 | V | (TJ = 25 oC) | ||||
| ID (Silicon Limited) | 204 | A | TC=25oC | ||||
| ID (Package Limited) | 180 | A | TC=25oC | ||||
| ID (Silicon Limited) | 144 | A | TC=100oC | ||||
| IDM | 720 | A | Pulsed Drain Current (2) | ||||
| PD (TC=25oC) | 375 | W | Power Dissipation | ||||
| PD (TC=100oC) | 187 | W | Power Dissipation | ||||
| Thermal Characteristics | RθJA | 40 | °C/W | Thermal Resistance, Junction-to-Ambient | |||
| RθJC | 0.4 | °C/W | Thermal Resistance, Junction-to-Case | ||||
| Electrical Characteristics | BVDSS | 135 | V | ID = 250µA, VGS = 0V | 135 | ||
| VGS(th) | V | VDS = VGS, ID = 250µA | 2.5 | 3.9 | |||
| IDSS | µA | VDS = 135V, VGS = 0V | 1.0 | ||||
| IGSS | ±µA | VGS = ±20V, VDS = 0V | ±0.1 | ||||
| RDS(ON) | mΩ | VGS = 10V, ID = 50A | 3.8 | 4.5 | |||
| gfs | S | VDS = 10V, ID = 50A | 122 | ||||
| VSD | V | IS = 50A, VGS = 0V | 0.9 | 1.2 | |||
| Dynamic Characteristics | Qg | nC | VDS = 70V, ID = 50A, VGS = 10V | 123 | |||
| Qgs | nC | 41 | |||||
| Qgd | nC | 22 | |||||
| Ciss | pF | VDS = 70V, VGS = 0V, f = 1.0MHz | 9267 | ||||
| Coss | pF | VDS = 70V, VGS = 0V, f = 1.0MHz | 923 | ||||
| Crss | pF | VDS = 70V, VGS = 0V, f = 1.0MHz | 27 | ||||
| trr | ns | IF = 50A, dl/dt = 125A/μs | 117 | ||||
| Switching Characteristics | td(on) | ns | VGS = 10V, VDS = 70V, ID = 50A , RG = 3.0Ω | 36 | |||
| tr | ns | VGS = 10V, VDS = 70V, ID = 50A , RG = 3.0Ω | 21 | ||||
| Switching Characteristics | td(off) | ns | VGS = 10V, VDS = 70V, ID = 50A , RG = 3.0Ω | 83 | |||
| tf | ns | VGS = 10V, VDS = 70V, ID = 50A , RG = 3.0Ω | 13 | ||||
| Ordering Information | Part Number | MDES14N045RH | Temp. Range: -55~175°C, Package: TO-263-7P, Packing: Tape & Reel |
2509121506_MagnaChip-Semicon-MDES14N045RH_C4944866.pdf
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