Power transistor MagnaChip Semicon MMD60R400RFZRH with continuous drain current rating up to 11 amps
Key Attributes
Model Number:
MMD60R400RFZRH
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
11A
RDS(on):
360mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3pF
Output Capacitance(Coss):
20pF
Input Capacitance(Ciss):
670pF
Pd - Power Dissipation:
69.4W
Gate Charge(Qg):
18.4nC@10V
Mfr. Part #:
MMD60R400RFZRH
Package:
TO-252(DPAK)
Product Description
Product Overview
The MMD60R400RFZ is a power MOSFET from Magnachip Semiconductor, utilizing advanced super junction technology to achieve very low on-resistance and gate charge. This design enhances efficiency through optimized charge coupling and offers designers the advantage of low EMI and reduced switching losses. It features an ultra-fast body diode, 100% avalanche tested, and a green package with Pb-free plating and halogen-free components, including an integrated Zener for protection.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Product Code: MMD60R400RFZ
- Marking: 60R400RFZ
- Temperature Range: -55 ~ 150C
- Package: TO-252
- Packing: Reel
- RoHS Status: Compliant
- Certifications: Green Package (Pb Free Plating, Halogen Free), Integrated Zener
Technical Specifications
| Parameter | Symbol | Rating | Unit | Note |
|---|---|---|---|---|
| Drain - Source voltage | VDSS | 600 | V | |
| Gate - Source voltage | VGSS | 25 | V | |
| Continuous drain current | ID | 11.0 | A | TC=25; limited by maximum junction temperature |
| Continuous drain current | ID | 7.0 | A | TC=100; limited by maximum junction temperature |
| Pulsed drain current | IDM | 33.0 | A | Pulse width tP limited by Tj,max |
| Power dissipation | PD | 69.4 | W | |
| Single - pulse avalanche energy | EAS | 220 | mJ | IAS = 1.5 A |
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | |
| Diode dv/dt ruggedness | dv/dt | 50 | V/ns | ISD ID, di/dt = 1000A/s, VDS peak V(BR)DSS, VDD= 400V, Tj=25oC |
| Storage temperature | Tstg | -55 ~150 | C | |
| Maximum operating junction temperature | Tj | 150 | C | |
| Thermal resistance, junction-case max | RthJC | 1.80 | C/W | |
| Thermal resistance, junction-ambient max | RthJA | 40.7 | C/W | |
| Drain - Source Breakdown voltage | V(BR)DSS | 600 | V | VGS = 0V, ID = 1mA |
| Gate Threshold Voltage | VGS(th) | 4.0 | V | VDS = VGS, ID = 250A; Typ. |
| Zero Gate Voltage Drain Current | IDSS | 10 | A | VDS = 600V, VGS = 0V; Max. |
| Gate Leakage Current | IGSS | 10 | A | VGS = 25V, VDS =0V; Max. |
| Drain - Source On State Resistance | RDS(ON) | 0.403 | VGS = 10V, ID = 3.8A; Max. | |
| Drain - Source On State Resistance | RDS(ON) | 0.36 | VGS = 10V, ID = 3.8A; Typ. | |
| Input Capacitance | Ciss | 670 | pF | VDS = 100V, VGS = 0V, f = 400kHz; Typ. |
| Output Capacitance | Coss | 20 | pF | VDS = 100V, VGS = 0V, f = 400kHz; Typ. |
| Reverse Transfer Capacitance | Crss | 3 | pF | VDS = 100V, VGS = 0V, f = 400kHz; Typ. |
| Effective Output Capacitance | Co(er) | 32.1 | pF | VDS = 0V to 480V, VGS = 0V, f = 400kHz; Typ. |
| Turn On Delay Time | td(on) | 18.0 | ns | VGS = 10V, RG = 25, VDS = 300V, ID = 11A; Typ. |
| Rise Time | tr | 45.6 | ns | VGS = 10V, RG = 25, VDS = 300V, ID = 11A; Typ. |
| Turn Off Delay Time | td(off) | 51.0 | ns | VGS = 10V, RG = 25, VDS = 300V, ID = 11A; Typ. |
| Fall Time | tf | 12.7 | ns | VGS = 10V, RG = 25, VDS = 300V, ID = 11A; Typ. |
| Total Gate Charge | Qg | 18.4 | nC | VGS = 10V, VDS = 480V, ID = 11A; Typ. |
| Gate - Source Charge | Qgs | 6.6 | nC | VGS = 10V, VDS = 480V, ID = 11A; Typ. |
| Gate - Drain Charge | Qgd | 7.4 | nC | VGS = 10V, VDS = 480V, ID = 11A; Typ. |
| Gate Resistance | RG | 9.0 | VGS = 0V, f = 1MHz; Typ. | |
| Continuous Diode Forward Current | ISD | 11.0 | A | Tc=25oC unless otherwise specified; Max. |
| Diode Forward Voltage | VSD | 1.4 | V | ISD = 11A, VGS = 0V; Max. |
| Reverse Recovery Time | trr | 195 | ns | ISD = 11A, di/dt = 100A/s, VDD = 100V; Typ. |
| Reverse Recovery Charge | Qrr | 1.07 | C | ISD = 11A, di/dt = 100A/s, VDD = 100V; Typ. |
| Reverse Recovery Current | Irrm | 11.0 | A | ISD = 11A, di/dt = 100A/s, VDD = 100V; Typ. |
2509121533_MagnaChip-Semicon-MMD60R400RFZRH_C51902194.pdf
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