600V Power MOSFET MagnaChip Semicon MMQ60R078RFTH designed for telecom server power and soft switching applications
Key Attributes
Model Number:
MMQ60R078RFTH
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
50A
RDS(on):
66mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13pF
Pd - Power Dissipation:
266W
Output Capacitance(Coss):
87pF
Input Capacitance(Ciss):
3.49nF
Gate Charge(Qg):
88nC@10V
Mfr. Part #:
MMQ60R078RFTH
Package:
TO-247
Product Description
Product Overview
The MMQ60R078RF is a 600V N-channel Power MOSFET from Magnachip Semiconductor, utilizing advanced super junction technology to achieve very low on-resistance and gate charge. Its low gate charge and ultra-fast body diode enhance turn-off performance, providing excellent efficiency and EMI in soft-switching applications. This MOSFET is ideal for soft-switching applications, server power supplies, telecom, and EV charging.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Product Code: MMQ60R078RF
- Marking: 60R078RF
- Temperature Range: -55 ~ 150C
- Package: TO-247
- Packing: Tube
- RoHS Status: Halogen Free
- Certifications: Green Package Pb Free Plating, Halogen Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
| Drain Source Breakdown voltage | V(BR)DSS | 600 | V | VGS = 0V, ID = 1mA |
| Gate Threshold Voltage | VGS(th) | 4.0 | V | VDS = VGS, ID = 250A |
| Zero Gate Voltage Drain Current | IDSS | 13 | uA | VDS = 600V, VGS = 0V |
| Gate Leakage Current | IGSS | 100 | nA | VGS = 30V, VDS = 0V |
| Drain-Source On State Resistance | RDS(ON) | 78 | m | VGS = 10V, ID = 25 A |
| Input Capacitance | Ciss | 3490 | pF | VDS = 400V, VGS = 0V, f = 400kHz |
| Output Capacitance | Coss | 87 | pF | VDS = 400V, VGS = 0V, f = 400kHz |
| Reverse Transfer Capacitance | Crss | 13 | pF | VDS = 400V, VGS = 0V, f = 400kHz |
| Effective Output Capacitance Energy Related | Co(er) | 137 | pF | VDS = 0V to 480V, VGS = 0V, f = 400kHz |
| Turn On Delay Time | td(on) | 33 | ns | VGS = 10V, RG = 2, VDD = 300V, ID = 50A |
| Rise Time | tr | 160 | ns | VGS = 10V, RG = 2, VDD = 300V, ID = 50A |
| Turn Off Delay Time | td(off) | 76 | ns | VGS = 10V, RG = 2, VDD = 300V, ID = 50A |
| Fall Time | tf | 4.7 | ns | VGS = 10V, RG = 2, VDD = 300V, ID = 50A |
| Total Gate Charge | Qg | 88 | nC | VGS = 10V, VDD = 480V, ID = 45A |
| Gate Source Charge | Qgs | 28 | nC | VGS = 10V, VDD = 480V, ID = 45A |
| Gate Drain Charge | Qg | 35 | nC | VGS = 10V, VDD = 480V, ID = 45A |
| Gate Resistance | RG | 5.0 | VGS = 0V, f = 1MHz | |
| Continuous Diode Forward Current | ISD | 50 | A | |
| Diode Forward Voltage | VSD | 1.4 | V | ISD = 50 A, VGS = 0V |
| Reverse Recovery Time | trr | 280 | ns | ISD = 50 A, di/dt = 100A/s, VDD = 100V |
| Reverse Recovery Charge | Qrr | 2.69 | C | ISD = 50 A, di/dt = 100A/s, VDD = 100V |
| Reverse Recovery Current | Irrm | 18.8 | A | ISD = 50 A, di/dt = 100A/s, VDD = 100V |
| Continuous drain current | ID | 50 | A | TC=25 |
| Continuous drain current | ID | 31.6 | A | TC=100 |
| Pulsed drain current | IDM | 150 | A | Pulse width tP limited by Tj,max |
| Power dissipation | PD | 266 | W | Single |
| Single-pulse avalanche energy | EAS | 1130 | mJ | IAS = 9A |
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | |
| Diode dv/dt ruggedness | dv/dt | 50 | V/ns | ISD ID, di/dt = 1000A/s, VDS peak V(BR)DSS, VDD= 400V, Tj=25oC |
| Storage temperature | Tstg | -55 ~150 | oC | |
| Maximum operating junction temperature | Tj | 150 | oC | |
| Thermal resistance, junction-case max | RthJC | 0.47 | oC/W | |
| Thermal resistance, junction-ambient max | RthJA | 45.1 | oC/W |
2509121533_MagnaChip-Semicon-MMQ60R078RFTH_C51902184.pdf
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