switching MOSFET MagnaChip Semicon MDF13N65BTH suitable for in power factor correction and SMPS applications
Key Attributes
Model Number:
MDF13N65BTH
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
14A
RDS(on):
400mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
243pF
Number:
1 N-channel
Pd - Power Dissipation:
36.7W
Input Capacitance(Ciss):
2.4nF
Output Capacitance(Coss):
12.8pF
Gate Charge(Qg):
54nC@10V
Mfr. Part #:
MDF13N65BTH
Package:
TO-220F
Product Description
Product Overview
The MDF13N65B is an N-channel MOSFET from Magnachip Semiconductor, utilizing advanced MOSFET technology to deliver low on-state resistance, high switching performance, and excellent quality. This device is well-suited for applications requiring high-speed switching and general-purpose power management. Its robust design makes it ideal for Switch Mode Power Supplies (SMPS) and Power Factor Correction (PFC) circuits.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Model: MDF13N65B
- Package Type: TO-220F
- RoHS Status: Halogen Free
- Origin: Korea (implied by Magnachip Semiconductor Ltd.)
Technical Specifications
| Characteristics | Symbol | Rating | Unit | Test Condition | |
| Absolute Maximum Ratings | VDSS | 650 | V | ||
| VGSS | 30 | V | |||
| ID (TC=25C) | 14* | A | |||
| ID (TC=100C) | 8.8* | A | |||
| IDM | 56* | A | Pulsed Drain Current(1) | ||
| PD (TC=25C) | 36.7 | W | |||
| PD Derate above 25C | 0.29 | W/C | |||
| EAR | 23.1 | mJ | Repetitive Avalanche Energy(1) | ||
| dv/dt | 4.5 | V/ns | Peak Diode Recovery dv/dt(3) | ||
| EAS | 800 | mJ | Single Pulse Avalanche Energy(4) | ||
| Thermal Characteristics | RJA | 62.5 | C/W | Thermal Resistance, Junction-to-Ambient(1) | |
| RJC | 3.4 | C/W | Thermal Resistance, Junction-to-Case(1) | ||
| Electrical Characteristics | BVDSS | 650 | V | ID = 250A, VGS = 0V | |
| VGS(th) | 2.0 ~ 4.0 | V | VDS = VGS, ID = 250A | ||
| IDSS | - | 1 | A | VDS = 600V, VGS = 0V | |
| IGSS | - | 100 | nA | VGS = 30V, VDS = 0V | |
| RDS(ON) | 0.40 ~ 0.46 | VGS = 10V, ID = 7A | |||
| gfs | - | 3.7 | - | S | VDS = 30V, ID = 7A |
| IS | - | 14 | A | Maximum Continuous Drain to Source Diode Forward Current | |
| Dynamic Characteristics | QG | - | 54 | nC | VDS = 520V, ID = 14.0A, VGS = 10V(3) |
| Qgs | - | 13 | - | nC | |
| Qgd | - | 21 | - | nC | |
| Ciss | - | 2400 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | |
| Coss | - | 243 | - | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Crss | - | 12.8 | - | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Switching Characteristics | td(on) | - | 32 | nS | VGS = 10V, VDS = 325V, ID = 14.0A, RG = 25(3) |
| tr | - | 81 | - | nS | |
| td(off) | - | 204 | - | nS | |
| tf | - | 76 | - | nS | |
| Body Diode Characteristics | VSD | - | 1.4 | V | IS = 14.0A, VGS = 0V |
| trr | - | 377 | nS | IF = 14.A, dl/dt = 100A/s(3) | |
| Qrr | - | 8.2 | C | IF = 14.A, dl/dt = 100A/s(3) |
2509121506_MagnaChip-Semicon-MDF13N65BTH_C22403483.pdf
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