Power MOSFET device MagnaChip Semicon MMF80R650QZTH optimized for low on resistance and gate charge
Key Attributes
Model Number:
MMF80R650QZTH
Product Custom Attributes
Drain To Source Voltage:
800V
Current - Continuous Drain(Id):
8A
RDS(on):
560mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.1pF
Pd - Power Dissipation:
29W
Input Capacitance(Ciss):
615pF
Output Capacitance(Coss):
28pF
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
MMF80R650QZTH
Package:
TO-220F
Product Description
Product Overview
The MMF80R650QZ is a power MOSFET utilizing Magnachip's advanced super junction technology, designed for very low on-resistance and gate charge. It offers significantly higher efficiency through optimized charge coupling technology and provides designers with the advantage of low EMI and low switching loss. This device is suitable for PFC power supply stages and general switching applications.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Model: MMF80R650QZ
- Package: TO-220F(3L)
- Certifications: Halogen Free, Pb Free Plating
Technical Specifications
| Parameter | Symbol | Rating | Unit | Note |
| Drain Source voltage | VDSS | 800 | V | |
| Gate Source voltage | VGSS | 20 | V | |
| Continuous drain current | ID | 8 | A | TC=25 oC |
| Continuous drain current | ID | 5.05 | A | TC=100 oC |
| Pulsed drain current | IDM | 24 | A | Pulse width tP limited by Tj,max |
| Power dissipation | PD | 29 | W | |
| Single - pulse avalanche energy | EAS | 340 | mJ | |
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | |
| Diode dv/dt ruggedness | dv/dt | 15 | V/ns | ISD ID, VDS peak V(BR)DSS |
| Storage temperature | Tstg | -55 ~150 | o C | |
| Maximum operating junction temperature | Tj | 150 | o C | |
| Thermal resistance, junction-case max | Rthjc | 4.3 | o C/W | |
| Thermal resistance, junction-ambient max | Rthja | 75 | o C/W | |
| Drain Source Breakdown voltage | V(BR)DSS | 800 | V | VGS = 0V, ID = 0.25mA |
| Gate Threshold Voltage | VGS(th) | 3.5 | V | VDS = VGS, ID = 0.25mA |
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS = 800V, VGS = 0V |
| Gate Leakage Current | IGSS | 10 | uA | VGS = 20V, VDS = 0V |
| Drain-Source On State Resistance | RDS(ON) | 0.65 | VGS = 10V, ID = 5.1A | |
| Input Capacitance | Ciss | 615 | pF | VDS = 100V, VGS = 0V, f = 400kHz |
| Output Capacitance | Coss | 28 | pF | |
| Reverse Transfer Capacitance | Crss | 1.1 | pF | |
| Effective Output Capacitance Energy Related | Co(er) | 15 | pF | VDS = 0V to 640V, VGS = 0V, f = 400kHz |
| Turn On Delay Time | td(on) | 19 | ns | VGS = 10V, RG = 25, VDS = 400V, ID = 8A |
| Rise Time | tr | 34 | ns | |
| Turn Off Delay Time | td(off) | 121 | ns | |
| Fall Time | tf | 20 | ns | |
| Total Gate Charge | Qg | 18 | nC | VGS = 10V, VDS = 640V, ID = 8A |
| Gate Source Charge | Qgs | 5.5 | nC | |
| Gate Drain Charge | Qg d | 6.7 | nC | |
| Gate Resistance | RG | 28 | VGS = 0V, f = 1.0MHz | |
| Continuous Diode Forward Current | ISD | 8 | A | |
| Diode Forward Voltage | VSD | 1.4 | V | ISD = 8A, VGS = 0V |
| Reverse Recovery Time | trr | 403 | ns | ISD = 8A di/dt = 100A/us VDD = 100V |
| Reverse Recovery Charge | Qrr | 3.8 | uC | |
| Reverse Recovery Current | Irrm | 19 | A |
2509121533_MagnaChip-Semicon-MMF80R650QZTH_C51891812.pdf
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