General purpose NPN transistor LRC L9014RLT1G with RoHS compliance and 5V emitter base voltage rating

Key Attributes
Model Number: L9014RLT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
-
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
L9014RLT1G
Package:
SOT-23
Product Description

Product Overview

The L9014QLT1G is a general-purpose NPN silicon transistor from LESHAN RADIO COMPANY, LTD. It is complementary to the L9014. This transistor is suitable for various electronic applications requiring reliable performance.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material: Silicon
  • Certifications: AEC-Q101 Qualified and PPAP Capable (for S- Prefix series)
  • RoHS Compliance: Declared

Technical Specifications

SymbolCharacteristicValueUnitNotes
VCEOCollector-Emitter Voltage45V
VCBOCollector-Base Voltage50V
VEBOEmitter-Base Voltage5V
ICCollector Current-Continuous100mA
PDTotal Device Dissipation (FR-5 Board)225mWTA=25C, Derate above 25C: 1.8 mW/C
PDTotal Device Dissipation (Alumina Substrate)300mWTA=25C, Derate above 25C: 2.4 mW/C
RJAThermal Resistance, Junction to Ambient (FR-5 Board)556C/W
RJAThermal Resistance, Junction to Ambient (Alumina Substrate)417C/W
TJ, TstgJunction and Storage Temperature-55 to +150C
V(BR)CEOCollector-Emitter Breakdown Voltage45VIC=1.0mA
V(BR)EBOEmitter-Base Breakdown Voltage5VIE=100A
V(BR)CBOCollector-Base Breakdown Voltage50VIC=100A
ICBOCollector Cutoff Current100nAVCB=40V
IEBOEmitter Cutoff Current100nAVEB=3V
HFEDC Current Gain150 - 1000IC=1mA, VCE=5V
VCE(sat)Collector-Emitter Saturation Voltage-0.3VIC=100mA, IB=5mA

1810010214_LRC-L9014RLT1G_C78548.pdf

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