TO220F Package 650V IGBT MagnaChip Semicon MBF15T65PEHTH Ideal for Inverter and Motor Control Systems
Key Attributes
Model Number:
MBF15T65PEHTH
Product Custom Attributes
Pd - Power Dissipation:
48W
Td(off):
128ns
Td(on):
19ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
31pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@0.5mA
Gate Charge(Qg):
61nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
207ns
Switching Energy(Eoff):
86uJ
Turn-On Energy (Eon):
270uJ
Input Capacitance(Cies):
1.129nF
Pulsed Current- Forward(Ifm):
60A
Output Capacitance(Coes):
57pF
Mfr. Part #:
MBF15T65PEHTH
Package:
TO-220F
Product Description
Product Overview
The MBF15T65PEH is a 650V Field Stop Trench IGBT from Magnachip Semiconductor, engineered for high performance, excellent quality, and superior ruggedness. Leveraging advanced Field Stop Trench IGBT Technology, this device offers high ruggedness specifically for motor control applications. Key features include a positive temperature coefficient for VCE(sat), a very soft and fast recovery anti-parallel diode, low EMI emissions, and a maximum junction temperature of 175C. It is ideal for use in inverters for motor control.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Technology: Field Stop Trench IGBT
- Package Type: TO-220F
- Certifications: Halogen Free
- Date of Issue: July 2021
- Version: 1.2
Technical Specifications
| Parameter | Symbol | Conditions | Rating | Unit |
|---|---|---|---|---|
| Maximum Ratings | ||||
| Collector-emitter voltage | VCE | - | 650 | V |
| DC collector current, limited by Tvjmax | IC | TC=25C | 30 | A |
| DC collector current, limited by Tvjmax | IC | TC=100C | 15 | A |
| Pulsed collector current, tp limited by Tvjmax | ICpuls | - | 60 | A |
| Diode forward current, limited by Tvjmax | IF | TC=25C | 30 | A |
| Diode forward current, limited by Tvjmax | IF | TC=100C | 15 | A |
| Diode pulsed current, tp limited by Tvjmax | IFpuls | - | 60 | A |
| Gate-emitter voltage | VGE | - | 20 | V |
| Power dissipation | PD | TC=25C | 48 | W |
| Power dissipation | PD | TC=100C | 24 | W |
| Short circuit withstand time | tsc | VCC 360V, VGE = 15V, Tvj = 150C | 5 | s |
| Operating Junction temperature range | Tvj | - | -40~175 | C |
| Storage temperature range | Tstg | - | -55~150 | C |
| Thermal Characteristics | ||||
| Thermal resistance junction-to-ambient | Rth(j-a) | - | 62 | C/W |
| Thermal resistance junction-to-case for IGBT | Rth(j-c) | - | 3.0 | C/W |
| Thermal resistance junction-to-case for Diode | Rth(j-c) | - | 5.0 | C/W |
| Electrical Characteristics (Tvj = 25C unless otherwise specified) | ||||
| Collector-emitter breakdown voltage | BVCES | IC = 2mA, VGE = 0V | 650 | V |
| Collector-emitter saturation voltage | VCE(sat) | IC = 15A, VGE= 15V, Tvj = 25C | 1.65 - 2.00 | V |
| Collector-emitter saturation voltage | VCE(sat) | IC = 15A, VGE= 15V, Tvj = 175C | 1.90 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 15A, Tvj = 25C | 1.85 - 2.30 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 15A, Tvj = 175C | 1.95 | V |
| Gate-emitter threshold voltage | VGE(th) | VCE = VGE, IC = 0.5mA | 4.5 - 6.5 | V |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 25C | - 20 | A |
| Gate-emitter leakage current | IGES | VGE = 20V, VCE = 0V | - 100 | nA |
| Dynamic Characteristics | ||||
| Total gate charge | QG | VCE = 520V, IC = 15A, VGE = 15V | - 61 | nC |
| Gate-emitter charge | QGE | - | - 11 | - |
| Gate-collector charge | QGC | - | - 35 | - |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | - 1129 - | pF |
| Output capacitance | Coes | - | - 57 - | pF |
| Reverse transfer capacitance | Cres | - | - 31 - | pF |
| Switching Characteristics (Tvj = 25C) | ||||
| Turn-on delay time | td(on) | VGE = 15V, VCC = 400V, IC = 15A, RG = 10, Inductive Load | - 19 - | ns |
| Rise time | tr | - | - 27 - | - |
| Turn-off delay time | td(off) | - | - 128 - | - |
| Fall time | tf | - | - 32 - | - |
| Turn-on switching energy | Eon | - | - 270 - | J |
| Turn-off switching energy | Eoff | - | - 86 - | J |
| Total switching energy | Ets | - | - 356 - | - |
| Switching Characteristics (Tvj = 175C) | ||||
| Turn-on delay time | td(on) | VGE = 15V, VCC = 400V, IC = 15A, RG = 10, Inductive Load | - 17 - | ns |
| Rise time | tr | - | - 29 - | - |
| Turn-off delay time | td(off) | - | - 150 - | - |
| Fall time | tf | - | - 130 - | - |
| Turn-on switching energy | Eon | - | - 342 - | J |
| Turn-off switching energy | Eoff | - | - 288 - | J |
| Total switching energy | Ets | - | - 630 - | - |
| Diode Characteristics | ||||
| Reverse recovery time | trr | IF = 15A, diF/dt = 200A/ s, Tvj = 25C | - 150 - | ns |
| Reverse recovery current | Irr | IF = 15A, diF/dt = 200A/ s, Tvj = 25C | - 5.2 - | A |
| Reverse recovery charge | Qrr | IF = 15A, diF/dt = 200A/ s, Tvj = 25C | - 390 - | nC |
| Reverse recovery time | trr | IF = 15A, diF/dt = 200A/ s, Tvj = 175C | - 207 - | ns |
| Reverse recovery current | Irr | IF = 15A, diF/dt = 200A/ s, Tvj = 175C | - 6.1 - | A |
| Reverse recovery charge | Qrr | IF = 15A, diF/dt = 200A/ s, Tvj = 175C | - 631 - | nC |
Part Number: MBF15T65PEHTH
Marking: 15T65PEH
Temperature Range: -55~150C
Packing: Tube
Model: MBF15T65PEH
Voltage Rating: 650V
Package Outline Dimension: TO-220F
2509121506_MagnaChip-Semicon-MBF15T65PEHTH_C51902189.pdf
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