Robust switching MOSFET MASPOWER MS4N250HGC0 designed for high power photovoltaic inverter solutions
Key Attributes
Model Number:
MS4N250HGC0
Product Custom Attributes
Drain To Source Voltage:
2.5kV
Current - Continuous Drain(Id):
4A
RDS(on):
19Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
5.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
48pF
Number:
1 N-channel
Output Capacitance(Coss):
110pF
Pd - Power Dissipation:
520W
Input Capacitance(Ciss):
1.54nF
Gate Charge(Qg):
74nC
Mfr. Part #:
MS4N250HGC0
Package:
TO-247
Product Description
Product Overview
The MS4N250HGC0 H1.03 Maspower is a high-performance power semiconductor designed for demanding switching applications. It features 100% avalanche testing, a fast intrinsic diode, minimized gate charge, and very low intrinsic capacitances, making it ideal for high-speed switching. Key applications include High Voltage Power Supplies and PV Inverters.
Product Attributes
- Brand: Maspower
- Model: MS4N250HGC0 H1.03
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Electrical Ratings | ||||||
| Drain-source voltage (VGS = 0) | VDS | 2500 | V | |||
| Gate- source voltage | VGS | ± 30 | ||||
| Drain current (continuous) at TC = 25 °C | ID | 4 | A | |||
| Drain current (continuous) at TC = 100 °C | ID | 2.5 | A | |||
| Drain current (pulsed) | IDM | 12 | ||||
| Total dissipation at TC = 25 °C | PD | 520 | W | |||
| Avalanche Current | IAR | 2.6 | A | |||
| Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V,L=20mH) | EAS | 67.6 | mJ | |||
| Operating junction temperature | TJ | -55 | 150 | ℃ | ||
| Storage temperature | Tstg | -55 | 150 | ℃ | ||
| Maximum lead temperature for soldering purpose | TL | 300 | ℃ | |||
| Mounting Torque | Md | 1.13 | N·m | |||
| Weight | G | 6 | g | |||
| Electrical Characteristics (Tvj = 25°C unless otherwise specified) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | ID = 250 µA, VGS = 0 | 2500 | V | ||
| Zero gate voltage drain current (VGS = 0) | IDSS | VDS = Max rating | 100 | µA | ||
| Zero gate voltage drain current (VGS = 0) | IDSS | VDS=Max rating, TC=125 °C | 1000 | µA | ||
| Gate-body leakage current (VDS = 0) | IGSS | VGS = ± 30 V | ±200 | nA | ||
| Gate threshold voltage | VGS(th) | VDS = VGS, ID = 250 µA | 3.5 | 5.5 | V | |
| Static drain-source on resistance | RDS(on) | VGS = 10V, ID = 2A | 19 | 25 | Ω | |
| Dynamic Characteristics | ||||||
| Forward transconductance | gfs | VDS = 50 V, ID = 2A | 1.2 | 2.7 | S | |
| Input capacitance | Ciss | VDS=25V,f=1MHz,VGS=0 | 1540 | pF | ||
| Output capacitance | Coss | 110 | pF | |||
| Reverse transfer capacitance | Crss | 48 | pF | |||
| Total gate charge | Qg | VDD=1250V,ID=2A, VGS=10V | 74 | nC | ||
| Gate-source charge | Qgs | |||||
| Gate-drain charge | Qgd | |||||
| Switching Times | ||||||
| Turn-on delay time | td(on) | Resistive load, VDD = 1250 V, ID =2A, VGS = 10 V, RG = 5Ω(External) | 19 | ns | ||
| Rise time | tr | 23 | ns | |||
| Turn-off-delay time | td(off) | 52 | ns | |||
| Fall time | tf | 53 | ns | |||
| Source-drain Diode | ||||||
| Source-drain current | ISD | 4 | A | |||
| Source-drain current (pulsed) | ISDM | 12 | ||||
| Forward on voltage | VSD | ISD= 4A, VGS= 0 | 1.5 | V | ||
| Reverse recovery time | trr | ISD=2A, -di/dt=100A/µs, VDD= 100 V | 600 | ns | ||
| Reverse recovery charge | Qrr | ISD=2A, -di/dt=100A/µs, VDD= 100 V | 540 | nC | ||
| Reverse recovery current | IRRM | ISD=2A, -di/dt=100A/µs, VDD= 100 V | 1.2 | A | ||
| Reverse recovery time | trr | ISD=2A, di/dt=100A/µs, VDD= 100 V, TJ=150°C | 800 | ns | ||
| Reverse recovery charge | Qrr | ISD=2A, di/dt=100A/µs, VDD= 100 V, TJ=150°C | 420 | nC | ||
| Reverse recovery current | IRRM | ISD=2A, di/dt=100A/µs, VDD= 100 V, TJ=150°C | 1.5 | A | ||
| Thermal Data | ||||||
| Thermal resistance junction-case max | Rthj-case | 0.24 | Ω/℃ | |||
| Thermal resistance junction-ambient max | Rthj-amb | 50 | Ω/℃ | |||
2411261901_MASPOWER-MS4N250HGC0_C37635841.pdf
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