Silicon PNP Driver Transistor LRC LMBTA55LT1G SOT23 Package Ideal for Electronic Driver Functions
Key Attributes
Model Number:
LMBTA55LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
4V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
50MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBTA55LT1G
Package:
SOT-23
Product Description
Product Overview
The LMBTA55 and LMBTA56 are PNP silicon driver transistors in a SOT-23 (TO-236AB) package. These transistors are designed for general-purpose applications requiring driver functionality.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Package Type: SOT-23 (TO-236AB)
- Material: Silicon PNP
- Certifications: AEC-Q101 Qualified and PPAP Capable (for S- prefix variants)
- RoHS Compliance: Declared
Technical Specifications
| Characteristic | Symbol | LMBTA55 | LMBTA56 | Unit | Conditions |
| MAXIMUM RATINGS | V CEO | -60 | -80 | Vdc | |
| V CBO | -60 | -80 | Vdc | ||
| V EBO | -4.0 | -4.0 | Vdc | ||
| I C (Continuous) | -500 | -500 | mAdc | ||
| T J , T stg | -55 to +150 | -55 to +150 | C | Junction and Storage Temperature | |
| THERMAL CHARACTERISTICS (FR-5 Board) | P D | 225 | 225 | mW | TA = 25C |
| Derate above 25C | 1.8 | 1.8 | mW/C | ||
| R JA | 556 | 556 | C/W | ||
| Total Device Dissipation (Alumina Substrate) | 300 | 300 | mW | TA = 25C | |
| ELECTRICAL CHARACTERISTICS | V (BR)CEO | -60 | -80 | Vdc | I C = -1.0 mAdc, I B= 0 |
| V (BR)EBO | -4.0 | -4.0 | Vdc | I E = -100 Adc, I C = 0 | |
| OFF CHARACTERISTICS | I CES | -0.1 | -0.1 | Adc | V CE = -60Vdc, I B = 0 |
| OFF CHARACTERISTICS | I CBO | -0.1 | -0.1 | Adc | V CB = -60Vdc, I E= 0 (LMBTA55); V CB = -80Vdc, I E= 0 (LMBTA56) |
| ON CHARACTERISTICS | h FE | 100 | 100 | I C = -10 mAdc, V CE = -1.0 Vdc | |
| h FE | 100 | 100 | I C = -100mAdc, V CE = -1.0 Vdc | ||
| ON CHARACTERISTICS | VCE(sat) | -0.25 | -0.25 | Vdc | I C = -100mAdc, I B = -10mAdc |
| ON CHARACTERISTICS | V BE(on) | -1.2 | -1.2 | Vdc | I C = -100mAdc, V CE = -1.0Vdc |
| SMALL-SIGNAL CHARACTERISTICS | f T | 50 | 50 | MHz | V CE = -1.0 Vdc, I C = -100mAdc, f = 100 MHz |
1809091023_LRC-LMBTA55LT1G_C136188.pdf
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