High voltage MOSFET MASPOWER MS12N100FC featuring low Crss and enhanced avalanche current for power electronics
Key Attributes
Model Number:
MS12N100FC
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
1kV
Current - Continuous Drain(Id):
12A
RDS(on):
1.35Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
17pF
Number:
1 N-channel
Output Capacitance(Coss):
246pF
Input Capacitance(Ciss):
2.83nF
Pd - Power Dissipation:
272W
Gate Charge(Qg):
56nC@10V
Mfr. Part #:
MS12N100FC
Package:
TO-247
Product Description
Product Overview
The MS12N100FC/E/T/S is a high-performance N-channel MOSFET designed for efficient power switching applications. It features low gate charge, low Crss (typ 13pF), and fast switching speeds, making it suitable for high-frequency applications. The device is 100% avalanche tested and offers improved dv/dt capability, ensuring reliability and robustness. It is a RoHS compliant product.
Product Attributes
- Brand: Maspower
- Product Series: MS12N100
- Revision: H1.08
- Certifications: RoHS
Technical Specifications
| Parameter | Symbol | MS12N100FC/FT | MS12N100FE | MS12N100FS | Unit | Notes |
| Drain-Source Voltage | VDSS | 1000 | 1000 | 1000 | V | |
| Drain Current-continuous (T=25) | ID | 12 | 12 | 12 | A | |
| Drain Current-continuous (T=100) | ID | 8 | 8 | 8 | A | |
| Drain Current-pulse | IDM | 20* | 20* | 20* | A | Note 1 |
| Gate-Source Voltage | VGS | 30 | 30 | 30 | V | |
| Single pulse avalanche energy | EAS | 1166 | 1166 | 1166 | mJ | Note 2 |
| Avalanche Current | IAR | 3 | 3 | 3 | A | Note 1 |
| Repetitive Avalanche Energy | EAR | 90 | 90 | 90 | mJ | Note 1 |
| Power Dissipation (TC=25) | PD | 367 | 100 | 68 | W | |
| Derate above 25 | 2.9 | 0.8 | 0.54 | W/ | ||
| Operating and Storage Temperature Range | TJ,TSTG | -55~+150 | -55~+150 | -55~+150 | ||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | 300 | 300 | ||
| Drain-Source Voltage | BVDSS | 1000 | 1000 | 1000 | V | ID=250A,VGS=0V |
| Zero Gate Voltage Drain Current | IDSS | 1 | 1 | 1 | A | VDS=VDSS,VGS=0V,TC=25 |
| Zero Gate Voltage Drain Current | IDSS | 10 | 10 | 10 | A | VDS=VDSS,TC=125 |
| Gate body leakage current | IGSS | 100 | 100 | 100 | nA | VDS=0V,VGS=30V |
| Gate Threshold Voltage | VGS(th) | 2.0 - 4.0 | 2.0 - 4.0 | 2.0 - 4.0 | V | VDS=VGS,ID=250A |
| Static Drain-Source On-Resistance | RDS(ON) | 1.0 - 1.2 | 1.0 - 1.2 | 1.0 - 1.2 | VGS=10V,ID=1A,TC=25 | |
| Forward Transconductance | gFS | 16 | 16 | 16 | S | VDS=40V,ID=6A (note 4) |
| Input capacitance | Ciss | 1584 | 1584 | 1584 | pF | VDS=25V, VGS=0V, f=1.0MHZ |
| Output capacitance | Coss | 166 | 166 | 166 | pF | |
| Reverse transfer capacitance | Crss | 12 | 12 | 12 | pF | |
| Turn-On delay time | td(on) | 24 | 24 | 24 | ns | VDD=600V,ID=12A, RGEN=25 (note 4,5) |
| Turn-On rise time | tr | 46 | 46 | 46 | ns | |
| Turn-Off delay time | td(Off) | 118 | 118 | 118 | ns | |
| Turn-Off rise time | tf | 58 | 58 | 58 | ns | |
| Total Gate Charge | Qg | 41 | 41 | 41 | nC | VDS=800V,ID=12A, VGS=10V (note 4,5) |
| Gate-Source charge | Qgs | 9 | 9 | 9 | nC | |
| Gate-Drain charge | Qg d | 16 | 16 | 16 | nC | |
| Diode Forward Voltage | VSD | 1.2 | 1.2 | 1.2 | V | VGS=0V,IS=1A (note 3) |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 110 | 110 | 110 | A | |
| Maximum Continuous Drain Source Diode Forward Current | IS | 12 | 12 | 12 | A | |
| Reverse recovery time | trr | 620 | 620 | 620 | ns | VGS=0V, IS=8A dIF/dt=100A/s (note 4) |
| Reverse recovery charge | Qrr | 4.39 | 4.39 | 4.39 | C | |
| Thermal Resistance,junction to Case | Rth(j-C) | 0.4 | 1.25 | 1.84 | /W | |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 36 | 62.5 | 62.5 | /W |
Applications
- High frequency switching mode power supply
- Electronic ballast based on half bridge
- LED power supplies
Order Information
| Order Codes | Package | Packaging |
| MS12N100FC | TO-247 | Tube |
| MS12N100FE | TO-263 | Tube |
| MS12N100FT | TO-220 | Tube |
| MS12N100FS | TO-220F | Tube |
2411261907_MASPOWER-MS12N100FC_C3825157.pdf
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