Power Electronics MOSFET MASPOWER MS8N120FE 1200V N Channel 8A Drain Current Avalanche Rugged Device
Key Attributes
Model Number:
MS8N120FE
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
8A
RDS(on):
3.5Ω@10V,4A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
20pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
260W
Input Capacitance(Ciss):
1.32nF@25V
Gate Charge(Qg):
89.3nC@10V
Mfr. Part #:
MS8N120FE
Package:
TO-263
Product Description
Product Overview
The MS8N120FC/T/E/S is a high-performance N-channel MOSFET from Maspower, designed for demanding switching applications. It features 100% avalanche tested, avalanche ruggedness, very low intrinsic capacitances, high speed switching, and very low on-resistance, making it ideal for welders, UPS systems, PV inverters, and general switching applications.
Product Attributes
- Brand: Maspower
- Model: MS8N120FC/T/E/S H1.13
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions | TO-247/TO-263 | TO-220 | TO-220F |
| Electrical Ratings | |||||||
| Drain-source voltage | VDS | 1200 | V | VGS = 0 | |||
| Gate- source voltage | VGS | ± 30 | |||||
| Drain current (continuous) | ID | 8 | A | at TC = 25 °C | |||
| Drain current (continuous) | ID | 5.5 | A | at TC = 100 °C | |||
| Drain current (pulsed) | IDM | 24 | A | (pulse width limited by TJ max) | |||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | ||||
| Total dissipation | PTOT | 320 | W | at TC = 25 °C | ✔ | ||
| Total dissipation | PTOT | 250 | W | at TC = 25 °C | ✔ | ||
| Total dissipation | PTOT | 68 | W | at TC = 25 °C | ✔ | ||
| Operating junction temperature | TJ | -55 to 150 | °C | ||||
| Storage temperature | Tstg | -55 to 150 | °C | ||||
| Thermal Data | |||||||
| Thermal resistance junction-case max | Rthj-case | 0.39 | W/°C | ✔ | 0.5 | 1.84 | |
| Thermal resistance junction-ambient max | Rthj-amb | 50 | W/°C | ✔ | 62.5 | 62.5 | |
| Maximum lead temperature for soldering | TJ | 300 | °C | ||||
| Avalanche Characteristics | |||||||
| Avalanche current, repetitive or not-repetitive | IAR | 8 | A | (pulse width limited by TJ max) | |||
| Single pulse avalanche energy | EAS | 83 | mJ | (starting TJ = 25 °C, ID = IAR, VDD = 50 V) | |||
| Electrical Characteristics (Tvj = 25°C unless otherwise specified) | |||||||
| On /off states | |||||||
| Drain-source breakdown voltage | V(BR)DSS | 1200 | V | ID = 1 mA, VGS = 0 | |||
| Zero gate voltage drain current | IDSS | 10 | µA | VDS = Max rating, TC=125 °C | |||
| Gate-body leakage current | IGSS | ± 100 | nA | VGS = ± 30 V | |||
| Gate threshold voltage | VGS(th) | 3.5 - 4.5 - 5.5 | V | VDS = VGS, ID = 250 µA | |||
| Static drain-source on resistance | RDS(on) | 2.9 - 3.8 | Ω | VGS = 10V, ID = 1A | |||
| Dynamic | |||||||
| Forward transconductance | gfs | 4.2 | S | VDS = 30 V, ID = 2 (note 4) | |||
| Input capacitance | Ciss | 833 | pF | VDS=25V,f=1MHz,VGS=0 | |||
| Output capacitance | Coss | 150 | pF | VDS=25V,f=1MHz,VGS=0 | |||
| Reverse transfer capacitance | Crss | 98 | pF | VDS=25V,f=1MHz,VGS=0 | |||
| Gate input resistance | Rg | 2.61 | Ω | f=1MHz, Gate DC Bias=0, Test signal level=20mV, open drain | |||
| Total gate charge | Qg | 39 | nC | VDD=960V,ID=4A, VGS=10V (note 4,5) | |||
| Gate-source charge | Qgs | 6 | nC | VDD=960V,ID=4A, VGS=10V (note 4,5) | |||
| Gate-drain charge | Qgd | 25 | nC | VDD=960V,ID=4A, VGS=10V (note 4,5) | |||
| Switching times | |||||||
| Turn-on delay time | td(on) | 29 | ns | VDD = 600 V, ID = 4 A, RG = 25 Ω, VGS = 10 V | |||
| Rise time | tr | 55 | ns | VDD = 600 V, ID = 4 A, RG = 25 Ω, VGS = 10 V | |||
| Turn-off-delay time | td(off) | 94 | ns | VDD = 600 V, ID = 4 A, RG = 25 Ω, VGS = 10 V | |||
| Fall time | tf | 88 | ns | VDD = 600 V, ID = 4 A, RG = 25 Ω, VGS = 10 V | |||
| Source drain diode | |||||||
| Source-drain current | ISD | 8 | A | ||||
| Source-drain current (pulsed) | ISDM | 22 | A | ||||
| Forward on voltage | VSD | 1.2 | V | ISD= 1A, VGS= 0 | |||
| Reverse recovery time | trr | 595 | nS | ISD= 4A, di/dt= 100A/µs, TJ=25°C(note 4) | |||
| Reverse recovery charge | Qrr | 4.9 | µC | ISD= 4A, di/dt= 100A/µs, TJ=25°C(note 4) | |||
2411261924_MASPOWER-MS8N120FE_C5353717.pdf
Related Products
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
