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quality General Purpose Transistor LRC LMBT4401LT1G NPN Silicon RoHS Compliant PPAP Capable Device factory
quality General Purpose Transistor LRC LMBT4401LT1G NPN Silicon RoHS Compliant PPAP Capable Device factory

General Purpose Transistor LRC LMBT4401LT1G NPN Silicon RoHS Compliant PPAP Capable Device

Key Attributes
Model Number: LMBT4401LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
250MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBT4401LT1G
Package:
SOT-23
Product Description

General Purpose Transistors NPN Silicon

This NPN silicon transistor is designed for general-purpose applications. It is AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive and other applications requiring unique site and control change requirements. The material is compliant with RoHS requirements and Halogen Free.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material Compliance: RoHS, Halogen Free
  • Certifications: AEC-Q101 Qualified, PPAP Capable

Technical Specifications

Device Marking Order Information Max. Collector Current (Continuous) Max. Collector-Emitter Voltage (VCEO) Max. Collector-Base Voltage (VCBO) Max. Emitter-Base Voltage (VEBO) Total Device Dissipation (PD) @ 25C (FR-5 Board) Thermal Resistance (RJA) @ 25C (FR-5 Board) Total Device Dissipation (PD) @ 25C (Alumina Substrate) Thermal Resistance (RJA) @ 25C (Alumina Substrate) Junction and Storage Temperature (TJ, Tstg)
LMBT4401LT1G 3000/Tape&Reel 600 mAdc 40 Vdc 60 Vdc 6 Vdc 225 mW 556 /W 300 mW 417 /W -55+150
LMBT4401LT3G 10000/Tape&Reel 600 mAdc 40 Vdc 60 Vdc 6 Vdc 225 mW 556 /W 300 mW 417 /W -55+150
S-LMBT4401LT1G (Not Specified) 600 mAdc 40 Vdc 60 Vdc 6 Vdc 225 mW 556 /W 300 mW 417 /W -55+150
Characteristic Symbol Min. Typ. Max. Unit Conditions
CollectorEmitter Breakdown Voltage VBR(CEO) 40 Vdc (IC = 1.0 mAdc, IB = 0)
CollectorBase Breakdown Voltage VBR(CBO) 60 Vdc (IC = 0.1mAdc, IE = 0)
EmitterBase Breakdown Voltage VBR(EBO) 6 Vdc (IE = 0.1mAdc, IC = 0)
Base Cutoff Current ICEX 0.1 A (V CE = 35 Vdc, VEB = 0.4Vdc)
Collector Cutoff Current IBEV 0.1 A (V CE = 35 Vdc, VEB = 0.4Vdc)
DC Current Gain hFE 20 (IC = 0.1 mAdc, V CE = 1.0 Vdc)
DC Current Gain hFE 40 (IC = 1.0 mAdc, V CE = 1.0 Vdc)
DC Current Gain hFE 80 (IC = 10 mAdc, V CE = 1.0 Vdc)
DC Current Gain hFE 100 300 (IC = 150 mAdc, V CE = 1.0 Vdc)
DC Current Gain hFE 40 (IC = 500 mAdc, V CE = 2.0 Vdc)
CollectorEmitter Saturation Voltage VCE(sat) 0.4 V (IC = 150 mAdc, IB = 15 mAdc)
CollectorEmitter Saturation Voltage VCE(sat) 0.75 V (IC = 500mAdc, IB = 50 mAdc)
BaseEmitter Saturation Voltage VBE(sat) 0.75 0.95 V (IC = 150 mAdc, IB = 15 mAdc)
BaseEmitter Saturation Voltage VBE(sat) 1.2 V (IC = 500mAdc, IB = 50 mAdc)
CurrentGain Bandwidth Product fT 250 MHz (IC = 20mAdc, V CE= 20Vdc, f = 100MHz)
CollectorBase Capacitance Ccb 6.5 pF (V CB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
EmitterBase Capacitance Ceb 30 pF (V EB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance hie 1 15 k (V CE= 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio hre 0.1 8 X 10 4 (V CE= 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
SmallSignal Current Gain hfe 40 500 (V CE= 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Output Admittance hoe 1 30 mhos (V CE= 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Delay Time td 15 ns (V CC = 30 Vdc, VEB= 2.0Vdc,IC = 150 mAdc, IB1 = 15 mAdc)
Rise Time tr 20 ns (V CC = 30 Vdc, VEB= 2.0Vdc,IC = 150 mAdc, IB1 = 15 mAdc)
Storage Time ts 225 ns (V CC = 30 Vdc, IC = 150 mAdc,IB1 = IB2 = 15 mAdc)
Fall Time tf 30 ns (V CC = 30 Vdc, IC = 150 mAdc,IB1 = IB2 = 15 mAdc)

2412052036_LRC-LMBT4401LT1G_C78591.pdf

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