Dual bias resistor transistors LRC LMUN5113DW1T1G with SC88 package and compliance to halogen free standards
Product Overview
The LMUN5113DW1T1G and S-LMUN5113DW1T1G are dual bias resistor transistors designed for surface mount applications. These PNP silicon transistors with monolithic bias resistor networks simplify circuit design, reduce board space, and decrease component count. The 'S-' prefix denotes automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability. They are compliant with RoHS requirements and Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Product Type: Dual Bias Resistor Transistors
- Material Compliance: RoHS, Halogen Free
- Qualification: AEC-Q101 (S- prefix models)
- PPAP Capable (S- prefix models)
- Package Type: SC88 (SOT-363)
- Shipping: 3000 Units/Tape & Reel
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Notes |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta = 25C) | ||||||
| Collector Current - Continuous | IC | - | - | -100 | mA | |
| Collector-Emitter Voltage | VCEO | - | - | -50 | V | |
| Collector-Base Voltage | VCBO | - | - | -50 | V | |
| Thermal Characteristics | ||||||
| Total Device Dissipation | PD | - | - | 250 | mW | @ TA = 25C (Note 1) |
| Derate above 25C | - | 1.5 | mW/C | |||
| Thermal Resistance, Junction-to-Ambient | RJA | - | 493 | C/W | (Note 1) | |
| Thermal Resistance, Junction-to-Lead | RJL | - | 188 | C/W | (Note 1, Both Junctions Heated) | |
| Junction and Storage Temperature | TJ, Tstg | -55 | - | +150 | C | |
| Electrical Characteristics (Ta= 25C) | ||||||
| Collector-Emitter Breakdown Voltage | VBR(CEO) | -50 | - | - | V | (IC = -2.0 mA, IB = 0) |
| Collector-Base Breakdown Voltage | VBR(CBO) | -50 | - | - | V | (IC = -10 A, IE = 0) |
| Collector-Base Cutoff Current | ICBO | - | - | -100 | nA | (VCB = -50 V, IE = 0) |
| Collector-Emitter Cutoff Current | ICEO | - | - | -500 | nA | (VCE = -50 V, IB = 0) |
| Emitter-Base Cutoff Current | IEBO | - | - | -100 | nA | (VEB = -6.0 V, IC = 0) |
| DC Current Gain | HFE | 80 | - | 140 | - | (IC = -5.0 mA, VCE = -10 V) (Note 2.) |
| CollectorEmitter Saturation Voltage | VCE(sat) | - | - | -0.25 | V | (IC = -10 mA, IB = -0.3 mA) (Note 2.) |
| Input Resistor | R1 | - | 47 | - | K | |
| Resistor Ratio | R1/R2 | 0.8 | 1 | 1.2 | - | |
| Device Marking | LMUN5113DW1T1G | S-LMUN5113DW1T1G | ||||
| Resistor Values | R1(K) | 47 | 47 | 47 | R2(K) is also 47 | |
| Tape & Reel | 3000/Tape&Reel | Unit | ||||
Note 1: FR-4 @ Minimum Pad
Note 2: Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Outline and Dimensions
| Dimension | Millimeters (MIN) | Millimeters (NOM) | Millimeters (MAX) | Inches (MIN) | Inches (NOM) | Inches (MAX) |
|---|---|---|---|---|---|---|
| A | - | - | 1.10 | - | - | 0.043 |
| A1 | 0.00 | - | 0.10 | 0 | - | 0.004 |
| b | 0.15 | 0.20 | 0.25 | 0.006 | 0.008 | 0.01 |
| c | 0.08 | 0.15 | 0.22 | 0.003 | 0.006 | 0.009 |
| D | 1.80 | 2.00 | 2.20 | 0.07 | 0.078 | 0.086 |
| E | 2.00 | 2.10 | 2.20 | 0.078 | 0.082 | 0.086 |
| E1 | 1.15 | 1.25 | 1.35 | 0.045 | 0.049 | 0.053 |
| e | - | 0.65 BSC | - | - | 0.026 BSC | - |
| L | - | - | - | - | - | - |
| L2 | - | - | - | - | - | - |
| aaa | 0.15 | - | 0.30 | 0.006 | - | 0.012 |
| bbb | 0.10 | - | - | 0.004 | - | - |
| ccc | 0.10 | - | - | 0.004 | - | - |
| ddd | 0.10 | - | - | 0.004 | - | - |
Notes:
- Dimensioning and Tolerancing per ANSI Y14.5M, 1982.
- Controlling Dimension: Millimeters.
- Maximum Lead Thickness Includes Lead Finish. Minimum Lead Thickness Is The Minimum Thickness Of Base Material.
- Dimensions D and E Do Not Include Mold Flash, Protrusions or Gate Burrs.
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2410010101_LRC-LMUN5113DW1T1G_C2846987.pdf
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