Compact SOT23 PNP Silicon Transistor LRC LMUN2132LT1G with Integrated Monolithic Bias Resistor Network

Key Attributes
Model Number: LMUN2132LT1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
6.1kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
LMUN2132LT1G
Package:
SOT-23
Product Description

Product Overview

The LMUN2111LT1G Series are PNP Silicon Surface Mount Transistors featuring a monolithic bias resistor network (BRT). These devices are designed to replace single transistors and their external resistor bias networks, simplifying circuit design, reducing board space, and lowering component count. They are housed in a SOT-23 package suitable for low power surface mount applications and can be soldered using wave or reflow methods. The modified gull-winged leads absorb thermal stress during soldering, preventing die damage. These transistors are available in 8 mm embossed tape and reel packaging.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material: PNP Silicon
  • Package: SOT-23
  • Compliance: RoHS requirements

Technical Specifications

Model Series Device Marking R1 (k) R2 (k) Resistor Ratio (R1/R2) Shipping (7 inch/3000 units) Shipping (13 inch/10,000 units)
LMUN2111LT1G A6A 10 10 0.8 3000/Tape & Reel 10,000/Tape & Reel
LMUN2110LT1G A6O 47 8 0.17 3000/Tape & Reel 10,000/Tape & Reel
LMUN2112LT1G A6B 22 22 1.0 3000/Tape & Reel 10,000/Tape & Reel
LMUN2113LT1G A6C 47 47 1.0 3000/Tape & Reel 10,000/Tape & Reel
LMUN2114LT1G A6D 10 47 0.21 3000/Tape & Reel 10,000/Tape & Reel
LMUN2115LT1G A6E 10 8 1.25 3000/Tape & Reel 10,000/Tape & Reel
LMUN2116LT1G A6F 4.7 8 0.59 3000/Tape & Reel 10,000/Tape & Reel
LMUN2130LT1G A6G 1.0 1.0 1.0 3000/Tape & Reel 10,000/Tape & Reel
LMUN2131LT1G A6H 2.2 2.2 1.0 3000/Tape & Reel 10,000/Tape & Reel
LMUN2132LT1G A6J 4.7 4.7 1.0 3000/Tape & Reel 10,000/Tape & Reel
LMUN2133LT1G A6K 4.7 47 0.1 3000/Tape & Reel 10,000/Tape & Reel
LMUN2134LT1G A6L 22 47 0.47 3000/Tape & Reel 10,000/Tape & Reel
Characteristic Symbol Value Unit Notes
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC 100 mAdc
Total Device Dissipation (TA = 25C) PD 246 (Note 1.) / 400 (Note 2.) mW 1. FR4 @ Minimum Pad, 2. FR4 @ 1.0 x 1.0 inch Pad
Derate above 25C 1.5 (Note 1.) / 2.0 (Note 2.) C/W
Thermal Resistance Junction-to-Ambient RJA 508 (Note 1.) / 311 (Note 2.) C/W
Thermal Resistance Junction-to-Lead RJL 174 (Note 1.) / 208 (Note 2.) C/W
Junction and Storage Temperature Range TJ, Tstg 55 to +150 C
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO nAdc 100
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO nAdc 500
Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO 0.5 (LMUN2111LT1G) to 0.18 (LMUN2110LT1G) mAdc See specific models in datasheet
Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 Vdc
Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V(BR)CEO 50 Vdc Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
DC Current Gain (VCE = 10 V, IC = 5.0 mA) hFE 35 to 250 Model dependent
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(sat) Vdc 0.25 (Typ)
Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) VOL 0.2 Vdc Model dependent
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) VOH 4.9 Vdc
Input Resistor R1 (Typ) R1 0.7 to 61.1 k Model dependent
Pin 1 Pin 2 Pin 3
BASE EMITTER (GROUND) COLLECTOR (OUTPUT)

SOT-23 Package Dimensions (mm/inches):

Dim MIN MAX MIN MAX
A 2.80 3.04 0.1102 0.1197
B 1.20 1.40 0.0472 0.0551
C 0.89 1.11 0.0350 0.0440
D 0.37 0.50 0.0150 0.0200
G 1.78 2.04 0.0701 0.0807
H 0.013 0.100 0.0005 0.0040
J 0.085 0.177 0.0034 0.0070
K 0.35 0.69 0.0140 0.0285
L 0.89 1.02 0.0350 0.0401
S 2.10 2.64 0.0830 0.1039
V 0.45 0.60 0.0177 0.0236

2409302331_LRC-LMUN2132LT1G_C189898.pdf

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