Automotive Schottky diode LRC LBAT54AWT1G with low capacitance and halogen free material compliance
Key Attributes
Model Number:
LBAT54AWT1G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
600mA
Reverse Leakage Current (Ir):
2uA
Diode Configuration:
1 Pair Series Connection
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
400mV
Current - Rectified:
200mA
Mfr. Part #:
LBAT54AWT1G
Package:
SOT-323-3
Product Description
Product Overview
The LBAT54AWT1G and S-LBAT54AWT1G are dual series Schottky barrier diodes designed for automotive and other applications with unique site and control change requirements. The S- prefix variant is AEC-Q101 qualified and PPAP capable. These diodes are RoHS compliant and Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified (S- prefix only)
- Packaging: Tape&Reel
Technical Specifications
| Parameter | Symbol | LBAT54AWT1G | S-LBAT54AWT1G | Unit | Marking | Shipping |
| Reverse Breakdown Voltage (IR = 10 A) | V(BR)R | 200 | 200 | V | B7 | 3000/Tape&Reel |
| Total Capacitance (VR = 1.0 V, f = 1.0 MHz) | CT | 30 | 30 | pF | ||
| Reverse Leakage (VR = 25 V) | IR | 0.5 | 0.5 | A | ||
| Forward Voltage (IF = 0.1 mA) | VF | 0.22 | 0.22 | V | ||
| Forward Voltage (IF = 1.0 mA) | VF | 0.24 | 0.24 | V | ||
| Forward Voltage (IF = 10 mA) | VF | 0.29 | 0.29 | V | ||
| Forward Voltage (IF = 30 mA) | VF | 0.32 | 0.32 | V | ||
| Forward Voltage (IF = 100 mA) | VF | 0.35 | 0.35 | V | ||
| Reverse Recovery Time (IF = IR = 10 mA, IR(REC) = 1.0 mA) | trr | 5 | 5 | nS | ||
| Forward Current (DC) | IF | 0.2 | 0.2 | A | ||
| Repetitive Peak Forward Current | IFRM | 1 | 1 | A | ||
| NonRepetitive Peak Forward Current (t < 1.0 s) | IFSM | 60 | 60 | A | ||
| Forward Power Dissipation @ TA = 25C | PF | 1.6 | 1.6 | W | ||
| Derate above 25C | 12.5 | 12.5 | mW/ | |||
| Junction Temperature | TJ | 150 | 150 | |||
| Storage Temperature Range | Tstg | -55~+150 | -55~+150 | |||
| Device Type | LBAT54AWT3G | LBAT54AWT1G | B7 | 10000/Tape&Reel |
1912111437_LRC-LBAT54AWT1G_C383178.pdf
Related Products
High current Darlington transistor array Slkor ULN2003AU featuring seven NPN pairs for relay lamp and display driver
Product DescriptionThe ULN2003 is a monolithic high voltage and high current Darlington transistor array. It features seven NPN Darlington pairs with high-voltage outputs and common-cathode clamp diodes for switching inductive loads. Each Darlington pair has a collector-current rating of 500mA, and ...
High cell density trench P channel MOSFET SLkor SL12P03S designed for and synchronous buck converters
Product OverviewThe SL12P03S is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(on) and gate charge, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approval...
Power Electronics N Channel MOSFET Slkor SL90N20P with Fast Switching and Avalanche Tested Reliability
Product OverviewThis N-Channel MOSFET offers fast switching, 100% avalanche tested performance, and improved dv/dt capability. It is designed for high-power applications including Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and Power Factor Correction (PFC) systems...
Low resistance and fast switching N channel MOSFET Slkor 2SK3019 ideal for portable equipment circuits
Product OverviewThis N-channel MOSFET offers low on-resistance and fast switching speeds, making it ideal for portable equipment due to its low voltage drive capability. The device is designed for easy drive circuit implementation and can be paralleled effectively.Product AttributesBrand: slkormicro...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
