N Channel MOSFET LRC L2N7002SLLT1G Small Signal Device 60 Volt 380 Milliamp SOT23 Package
Key Attributes
Model Number:
L2N7002SLLT1G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
380mA
RDS(on):
2.8Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250μA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Output Capacitance(Coss):
10pF
Input Capacitance(Ciss):
35pF
Pd - Power Dissipation:
420mW
Gate Charge(Qg):
440pC@4.5V
Mfr. Part #:
L2N7002SLLT1G
Package:
SOT-23
Product Description
Product Overview
The L2N7002SLLT1G and S-L2N7002SLLT1G are N-Channel Small Signal MOSFETs designed for various applications including low side load switches, level shift circuits, DC-DC converters, and portable devices like DSCs, PDAs, and cell phones. The S-prefix variants are qualified for automotive applications with unique site and control change requirements, meeting AEC-Q101 standards and PPAP capability. These devices offer ESD protection and low RDS(on), with RoHS and Halogen-Free compliance.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements and Halogen Free
- Automotive Qualification (S-prefix): AEC-Q101 qualified, PPAP capable
- ESD Protected
Technical Specifications
| Model | Description | Drain-Source Voltage (VDSS) | Drain Current (ID) | Pulsed Drain Current (IDM) | Source Current (IS) | Package | Marking | Shipping |
|---|---|---|---|---|---|---|---|---|
| L2N7002SLLT1G | Small Signal MOSFET | 60 V | 380 mA | 1.5 A (tp=10s) | 300 mA (Body Diode) | SOT-23 (TO-236) | 701 | 3000/Tape&Reel |
| S-L2N7002SLLT1G | Small Signal MOSFET | 60 V | 380 mA | 1.5 A (tp=10s) | 300 mA (Body Diode) | SOT-23 (TO-236) | 701 | 10000/Tape&Reel |
| L2N7002SLLT3G | Small Signal MOSFET | 60 V | 380 mA | 1.5 A (tp=10s) | 300 mA (Body Diode) | SOT-23 (TO-236) | 701 | 3000/Tape&Reel |
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta = 25C) | |||||
| Gate-Source Voltage | VGS | ±20 | V | ||
| Drain-Source Breakdown Voltage | VBRDSS | 60 | V | ||
| Total Device Dissipation (Note 1) | PD | 420 | mW | ||
| Junction-to-Ambient (Note 1) | RθJA | 300 | °C/W | ||
| Junction and Storage Temperature | TJ,Tstg | -55 | +150 | °C | |
| ELECTRICAL CHARACTERISTICS (Ta= 25°C) | |||||
| Drain-Source Breakdown Voltage (VGS = 0, ID = 250µA) | VBRDSS | 60 | V | ||
| Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 V) | IDSS | 1.0 | 100 | µA | |
| Gate-Body Leakage Current, Forward (VGS = 20 V) | IGSSF | 10 | nA | ||
| Gate-Body Leakage Current, Reverse (VGS = -20 V) | IGSSR | 10 | nA | ||
| Gate Threshold Voltage (VDS = VGS, ID = 250µA) | VGS(th) | 1.0 | 2.8 | V | |
| Static Drain-Source On-State Resistance (VGS = 10 V, ID = 500 mA) | RDS(on) | 2.0 | 3.2 | Ω | |
| Static Drain-Source On-State Resistance (VGS = 4.5 V, ID = 200 mA) | RDS(on) | 5.0 | Ω | ||
| Forward Transconductance (VDS = 5.0 V, ID = 200 mA) | gfs | 80 | mS | ||
| Input Capacitance | Ciss | 71 | pF | ||
| Output Capacitance | Coss | 35 | pF | ||
| Reverse Transfer Capacitance | Crss | 10 | pF | ||
| Diode Forward On-Voltage (IS = 0.5A, VGS = 0 V) | VSD | 0.85 | V | ||
| Gate Resistance | Rg | 30 | KΩ | ||
Outline and Dimensions
| Dimension | Millimeters (min/nom/max) | Inches (min/nom/max) |
|---|---|---|
| A | 1.11 / 1.20 / 1.78 | 0.044 / 0.047 / 0.070 |
| A1 | 0.01 / 0.02 / 0.05 | 0.001 / 0.001 / 0.002 |
| b | 0.35 / 0.44 / 0.54 | 0.014 / 0.017 / 0.021 |
| c | 0.09 / 0.10 / 0.13 | 0.004 / 0.004 / 0.005 |
| D | 2.80 / 2.90 / 3.04 | 0.110 / 0.114 / 0.120 |
| E | 2.60 / 2.80 / 3.00 | 0.102 / 0.110 / 0.118 |
| e | 0.89 / 0.95 / 1.01 | 0.035 / 0.037 / 0.040 |
| HE | 2.10 / 2.40 / 2.64 | 0.083 / 0.094 / 0.104 |
| L | 0.45 / 0.55 / 0.65 | 0.018 / 0.022 / 0.026 |
| L1 | 0.10 / 0.20 / 0.30 | 0.004 / 0.008 / 0.012 |
| θ | 0° --- 10° | 0° --- 10° |
2405291419_LRC-L2N7002SLLT1G_C22446827.pdf
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