Low Voltage P Channel Power Field Effect Transistor ME2325 G with Enhanced Mode and DMOS Technology
Key Attributes
Model Number:
ME2325-G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.3A
Operating Temperature -:
-
RDS(on):
76mΩ@4.5V,3A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
29pF
Number:
1 P-Channel
Input Capacitance(Ciss):
621pF
Output Capacitance(Coss):
91.7pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
17.4nC@10V
Mfr. Part #:
ME2325-G
Package:
SOT-23
Product Description
Product Overview
The ME2325 is a P-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, and other battery-powered circuits requiring high-side switching and low in-line power loss in a small surface mount package.
Product Attributes
- Brand: Matsuki Electric/Force mos
- Origin: China (implied by DCC )
- Material: DMOS trench technology
- Color: Not specified
- Certifications: Pb-free (ME2325), Green product-Halogen free (ME2325-G)
Technical Specifications
| Parameter | Symbol | ME2325/ME2325-G | Unit |
| Maximum Ratings | |||
| Drain-Source Voltage | VDS | -30 | V |
| Gate-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TA=25) | ID | -4.3 | A |
| Continuous Drain Current (TA=70) | ID | -3.4 | A |
| Pulsed Drain Current | IDM | -17 | A |
| Maximum Power Dissipation (TA=25) | PD | 1.4 | W |
| Maximum Power Dissipation (TA=70) | PD | 0.9 | W |
| Storage Temperature Range | Tstg | -55 to 150 | |
| Thermal Resistance-Junction to Ambient* | RθJA | 90 | /W |
| Static Electrical Characteristics | |||
| Drain-Source Breakdown Voltage (VGS=0V, ID=-250μA) | V(BR)DSS | -30 | V |
| Gate Threshold Voltage (VDS=VGS, ID=-250μA) | VGS(th) | -1 to -3 | V |
| Gate Leakage Current (VDS=0V, VGS=±20V) | IGSS | ±100 | nA |
| Zero Gate Voltage Drain Current (VDS=-24V, VGS=0V) | IDSS | -1 | μA |
| Drain-Source On-Resistance (VGS=-10V, ID=-4.1A) | RDS(ON) | 38 to 50 | mΩ |
| Drain-Source On-Resistance (VGS=-4.5V, ID=-3A) | RDS(ON) | 50 to 76 | mΩ |
| Diode Forward Voltage (IS=-1A, VGS=0V) | VSD | -0.77 to -1 | V |
| Dynamic Electrical Characteristics | |||
| Total Gate Charge (VDS=-15V, VGS=-10V, ID=-4A) | Qg | 17.4 | nC |
| Total Gate Charge (VDS=-15V, VGS=-4.5V, ID=-4A) | Qg | 8.4 | nC |
| Gate-Source Charge | Qgs | 4.2 | nC |
| Gate-Drain Charge | Qgd | 3.3 | nC |
| Gate-Resistance (VDS=0V, VGS=0V, F=1MHz) | Rg | 6.8 | Ω |
| Input Capacitance (VDS=-15V, VGS=0V,f=1MHz) | Ciss | 621 | pF |
| Output Capacitance | Coss | 91.7 | pF |
| Reverse Transfer Capacitance | Crss | 29 | pF |
| Turn-On Delay Time (VDS=-15V, RL =5.2Ω, RGEN=3.8Ω, VGS=-10V) | td(on) | 55.3 | ns |
| Turn-On Rise Time | tr | 43.2 | ns |
| Turn-Off Delay Time | td(off) | 38.2 | ns |
| Turn-Off Fall Time | tf | 6.3 | ns |
2410121656_MATSUKI-ME2325-G_C145075.pdf
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