Small Signal N Channel MOSFET LRC L2N7002LT1G with AEC Q101 Qualification and Halogen Free Material
Product Overview
The L2N7002LT1G and S-L2N7002LT1G are N-Channel Small Signal MOSFETs designed for automotive and other applications requiring unique site and control change requirements. These devices are AEC-Q101 qualified and PPAP capable, offering RoHS compliance and Halogen-Free materials. They feature ESD protection up to 1000V, making them suitable for general-purpose switching and amplification.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Product Type: Small Signal MOSFET
- Channel Type: N-Channel
- Compliance: RoHS, Halogen Free
- Automotive Qualification: AEC-Q101 Qualified, PPAP Capable (for S- prefix models)
- ESD Protection: 1000V
- Package: SOT-23 (TO-236)
Technical Specifications
| Model | Description | DrainSource Voltage (VDS) | Continuous Drain Current (ID) | Continuous GateSource Voltage (VGS) | Pulsed Drain Current (IDM) | GateSource Voltage (VGS) | Total Device Dissipation (PD) | Thermal Resistance (RJA) | Junction and Storage Temperature (TJ, Tstg) | DrainSource Breakdown Voltage (VBRDSS) | Zero Gate Voltage Drain Current (IDSS) | GateBody Leakage Current (IGSS) | Gate Threshold Voltage (VGS(th)) | OnState Drain Current (ID(on)) | Static DrainSource OnState Voltage (VDS(on)) | Static DrainSource OnState Resistance (RDS(on)) | Forward Transconductance (gfs) | Input Capacitance (Ciss) | Output Capacitance (Coss) | Reverse Transfer Capacitance (Crss) | Diode Forward OnVoltage (VSD) | Continuous Source Current (IS) | Pulsed Source Current (ISM) | Marking | Ordering Information |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| L2N7002LT1G | Small Signal MOSFET | 60 Vdc | 115 mAdc | 60 Vdc | 800 Vdc | 20 Vdc | 225 mW @ TA = 25C (FR-5 Board) | 556 C/W | -55 ~ +150 C | 60 Vdc | 1.0 Adc @ TJ = 25C | 1.0 Adc | 1.4 Vdc @ ID = 250Adc | 500 mA | 0.375 Vdc @ VDS 2.0 VDS(on), VGS = 10 Vdc | 1.0 Ohms @ ID = 500 mAdc, VGS = 10 Vdc | 80 mmhos @ ID = 200 mAdc | 17 pF @ VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | 10 pF @ VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | 2.5 pF @ VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | 1.5 Vdc @ IS = 115 mAdc, VGS = 0 V | 115 mAdc | 800 mAdc | L2N7002LT1G | 3000/Tape&Reel |
| S-L2N7002LT1G | S-L2N7002LT1G | 10000/Tape&Reel | |||||||||||||||||||||||
| L2N7002LT3G | Small Signal MOSFET | 60 Vdc | 115 mAdc | 60 Vdc | 800 Vdc | 20 Vdc | 225 mW @ TA = 25C (FR-5 Board) | 556 C/W | -55 ~ +150 C | 60 Vdc | 1.0 Adc @ TJ = 25C | 1.0 Adc | 1.4 Vdc @ ID = 250Adc | 500 mA | 0.375 Vdc @ VDS 2.0 VDS(on), VGS = 10 Vdc | 1.0 Ohms @ ID = 500 mAdc, VGS = 10 Vdc | 80 mmhos @ ID = 200 mAdc | 17 pF @ VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | 10 pF @ VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | 2.5 pF @ VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | 1.5 Vdc @ IS = 115 mAdc, VGS = 0 V | 115 mAdc | 800 mAdc | L2N7002LT3G | 10000/Tape&Reel |
Notes:
- Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
- FR5 Board = 1.00.750.062 in.
- Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
Outline and Dimensions (SOT-23):
Dimensions are in millimeters (inches).
| Dimension | Min | Nom | Max |
|---|---|---|---|
| A | 0.89 | 1.0 | 1.11 |
| A1 | 0.01 | 0.06 | 0.10 |
| b | 0.37 | 0.44 | 0.50 |
| c | 0.09 | 0.13 | 0.18 |
| D | 2.80 | 2.9 | 3.04 |
| E | 2.60 | 2.70 | 2.80 |
| HE | 2.10 | 2.4 | 2.64 |
| L | 0.35 | 0.54 | 0.75 |
| L1 | 0.10 | 0.2 | 0.3 |
Soldering Footprint:
| Dimension | Min | Nom | Max |
|---|---|---|---|
| 0 --- 10 | 1.78 | 1.9 | 2.04 |
| 0 --- 10 | 0.07 | 0.075 | 0.081 |
| 0.083 | 0.094 | 0.104 | |
| 0.004 | 0.008 | 0.012 | |
| 0.114 | 0.12 | 0.13 | |
| 0.003 | 0.005 | 0.007 | |
| 0.014 | 0.018 | 0.021 | |
| 0.02 | 0.025 | 0.029 |
1809271814_LRC-L2N7002LT1G_C12779.pdf
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