Small Signal N Channel MOSFET LRC L2N7002LT1G with AEC Q101 Qualification and Halogen Free Material

Key Attributes
Model Number: L2N7002LT1G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
115mA
Operating Temperature -:
-
RDS(on):
1.4Ω@10V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.5pF
Number:
1 N-channel
Output Capacitance(Coss):
10pF
Input Capacitance(Ciss):
17pF
Pd - Power Dissipation:
225mW
Gate Charge(Qg):
-
Mfr. Part #:
L2N7002LT1G
Package:
SOT-23
Product Description

Product Overview

The L2N7002LT1G and S-L2N7002LT1G are N-Channel Small Signal MOSFETs designed for automotive and other applications requiring unique site and control change requirements. These devices are AEC-Q101 qualified and PPAP capable, offering RoHS compliance and Halogen-Free materials. They feature ESD protection up to 1000V, making them suitable for general-purpose switching and amplification.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Product Type: Small Signal MOSFET
  • Channel Type: N-Channel
  • Compliance: RoHS, Halogen Free
  • Automotive Qualification: AEC-Q101 Qualified, PPAP Capable (for S- prefix models)
  • ESD Protection: 1000V
  • Package: SOT-23 (TO-236)

Technical Specifications

Model Description DrainSource Voltage (VDS) Continuous Drain Current (ID) Continuous GateSource Voltage (VGS) Pulsed Drain Current (IDM) GateSource Voltage (VGS) Total Device Dissipation (PD) Thermal Resistance (RJA) Junction and Storage Temperature (TJ, Tstg) DrainSource Breakdown Voltage (VBRDSS) Zero Gate Voltage Drain Current (IDSS) GateBody Leakage Current (IGSS) Gate Threshold Voltage (VGS(th)) OnState Drain Current (ID(on)) Static DrainSource OnState Voltage (VDS(on)) Static DrainSource OnState Resistance (RDS(on)) Forward Transconductance (gfs) Input Capacitance (Ciss) Output Capacitance (Coss) Reverse Transfer Capacitance (Crss) Diode Forward OnVoltage (VSD) Continuous Source Current (IS) Pulsed Source Current (ISM) Marking Ordering Information
L2N7002LT1G Small Signal MOSFET 60 Vdc 115 mAdc 60 Vdc 800 Vdc 20 Vdc 225 mW @ TA = 25C (FR-5 Board) 556 C/W -55 ~ +150 C 60 Vdc 1.0 Adc @ TJ = 25C 1.0 Adc 1.4 Vdc @ ID = 250Adc 500 mA 0.375 Vdc @ VDS 2.0 VDS(on), VGS = 10 Vdc 1.0 Ohms @ ID = 500 mAdc, VGS = 10 Vdc 80 mmhos @ ID = 200 mAdc 17 pF @ VDS = 25 Vdc, VGS = 0, f = 1.0 MHz 10 pF @ VDS = 25 Vdc, VGS = 0, f = 1.0 MHz 2.5 pF @ VDS = 25 Vdc, VGS = 0, f = 1.0 MHz 1.5 Vdc @ IS = 115 mAdc, VGS = 0 V 115 mAdc 800 mAdc L2N7002LT1G 3000/Tape&Reel
S-L2N7002LT1G S-L2N7002LT1G 10000/Tape&Reel
L2N7002LT3G Small Signal MOSFET 60 Vdc 115 mAdc 60 Vdc 800 Vdc 20 Vdc 225 mW @ TA = 25C (FR-5 Board) 556 C/W -55 ~ +150 C 60 Vdc 1.0 Adc @ TJ = 25C 1.0 Adc 1.4 Vdc @ ID = 250Adc 500 mA 0.375 Vdc @ VDS 2.0 VDS(on), VGS = 10 Vdc 1.0 Ohms @ ID = 500 mAdc, VGS = 10 Vdc 80 mmhos @ ID = 200 mAdc 17 pF @ VDS = 25 Vdc, VGS = 0, f = 1.0 MHz 10 pF @ VDS = 25 Vdc, VGS = 0, f = 1.0 MHz 2.5 pF @ VDS = 25 Vdc, VGS = 0, f = 1.0 MHz 1.5 Vdc @ IS = 115 mAdc, VGS = 0 V 115 mAdc 800 mAdc L2N7002LT3G 10000/Tape&Reel

Notes:

  • Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
  • FR5 Board = 1.00.750.062 in.
  • Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

Outline and Dimensions (SOT-23):

Dimensions are in millimeters (inches).

Dimension Min Nom Max
A 0.89 1.0 1.11
A1 0.01 0.06 0.10
b 0.37 0.44 0.50
c 0.09 0.13 0.18
D 2.80 2.9 3.04
E 2.60 2.70 2.80
HE 2.10 2.4 2.64
L 0.35 0.54 0.75
L1 0.10 0.2 0.3

Soldering Footprint:

Dimension Min Nom Max
0 --- 10 1.78 1.9 2.04
0 --- 10 0.07 0.075 0.081
0.083 0.094 0.104
0.004 0.008 0.012
0.114 0.12 0.13
0.003 0.005 0.007
0.014 0.018 0.021
0.02 0.025 0.029

1809271814_LRC-L2N7002LT1G_C12779.pdf

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