NPN Silicon General Purpose Transistor S-LMBT3904LT1G AECQ101 Qualified Automotive Application Device
Key Attributes
Model Number:
S-LMBT3904LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S-LMBT3904LT1G
Package:
SOT-23
Product Description
Product Overview
The LMBT3904LT1G and S-LMBT3904LT1G are NPN Silicon General Purpose Transistors. The S-prefix variants are designed for automotive and other applications requiring unique site and control change requirements, and are AEC-Q101 qualified and PPAP capable. These devices comply with RoHS requirements and are Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Origin: China (implied by company name and location)
- Material: Silicon
- Certifications: RoHS, Halogen Free, AEC-Q101 (for S-prefix)
Technical Specifications
| Parameter | Symbol | LMBT3904LT1G | S-LMBT3904LT1G | Unit | Notes | |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS | ||||||
| CollectorEmitter Voltage | VCEO | 40 | V | |||
| CollectorBase Voltage | VCBO | 60 | V | |||
| EmitterBase Voltage | VEBO | 6 | V | |||
| Collector Current Continuous | IC | 200 | mA | |||
| Total Device Dissipation, FR5 Board | PD | mW | @ TA = 25C | |||
| Derate above 25C | mW/C | |||||
| JunctiontoAmbient Thermal Resistance | RJA | C/W | (Note 1) | |||
| Junction and Storage temperature | TJ,Tstg | -55+150 | C | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| OFF CHARACTERISTICS | ||||||
| CollectorEmitter Breakdown Voltage | VBR(CEO) | 40 | V | (IC = 1.0 mA, IB = 0) | ||
| CollectorBase Breakdown Voltage | VBR(CBO) | 60 | V | (IC = 10 A, IE = 0) | ||
| EmitterBase Breakdown Voltage | VBR(EBO) | 6 | V | (IE = 10 A, IC = 0) | ||
| Collector Cutoff Current | ICEX | nA | ( VCE = 30 V, VEB = 3.0V) | |||
| Base Cutoff Current | IBL | nA | (VCE = 30 Vdc, VEB = 3.0Vdc) | |||
| ON CHARACTERISTICS | (Note 2.) | |||||
| DC Current Gain | HFE | 40 - 70 (IC=0.1mA, VCE=1.0V) 100 - 300 (IC=1.0mA, VCE=1.0V) 60 (IC=10mA, VCE=1.0V) - (IC=50mA, VCE=1.0V) - (IC=100mA, VCE=1.0V) | ||||
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.95 (IC=10mA, IB=1.0mA) - (IC=50mA, IB=5.0mA) | V | |||
| BaseEmitter Saturation Voltage | VBE(sat) | - (IC=10mA, IB=1.0mA) - (IC=50mA, IB=5.0mA) | V | |||
| SMALLSIGNAL CHARACTERISTICS | ||||||
| CurrentGain Bandwidth Product | fT | 300 | MHz | (IC = 10mA, VCE= 20V, f = 100MHz) | ||
| Output Capacitance | Cobo | - | pF | (VCB = 5.0 V, IE = 0, f = 1.0 MHz) | ||
| Input Capacitance | Cibo | - | pF | (VEB = 0.5 V, IC = 0, f = 1.0 MHz) | ||
| SWITCHING CHARACTERISTICS | ||||||
| Delay Time | td | - | ns | (VCC = 3.0 V,VBE=-0.5V, IC = 10mA, IB1 = 1.0 mA) | ||
| Rise Time | tr | - | ns | (VCC = 3.0 V, IC = 10 mA,IB1 = IB2 = 1.0 mA) | ||
| Storage Time | ts | - | ns | |||
| Fall Time | tf | - | ns | |||
| DEVICE MARKING AND ORDERING INFORMATION | ||||||
| Device Marking | 1AM | 1AM | ||||
| Shipping | 3000/Tape&Reel | 10000/Tape&Reel | ||||
| Package | SOT23(TO-236) | SOT23(TO-236) | ||||
| Pinout | 1 BASE 2 EMITTER 3 COLLECTOR | 1 BASE 2 EMITTER 3 COLLECTOR | ||||
2202171630_LRC-S-LMBT3904LT1G_C383299.pdf
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