NChannel MOSFET with 1000V ESD protection and low onstate resistance LRC L2N7002WT1G compact SOT323 package
Key Attributes
Model Number:
L2N7002WT1G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
115mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
7.5Ω@10V,500mA
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
50pF
Pd - Power Dissipation:
225mW
Gate Charge(Qg):
-
Mfr. Part #:
L2N7002WT1G
Package:
SOT-323
Product Description
Product Overview
The L2N7002WT1G is a small signal N-Channel MOSFET from LESHAN RADIO COMPANY, LTD., designed for general-purpose applications. It features ESD protection up to 1000V and is available in a compact SOT-323 (SC-70) package. This device is suitable for various electronic circuits requiring efficient switching and low on-state resistance.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Package Type: SOT 323 (SC-70)
- Channel Type: NChannel
- ESD Protected: 1000V
- RoHS Compliance: Material complies with RoHS requirements.
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| MAXIMUM RATINGS | |||||
| DrainSource Voltage | VDSS | 60 | Vdc | ||
| DrainGate Voltage (RGS = 1.0 M) | VDGR | 60 | Vdc | ||
| Drain Current Continuous (TC = 25C) (Note 1.) | ID | 115 | mA | ||
| Drain Current Continuous (TC = 100C) (Note 1.) | ID | mA | |||
| Drain Current Pulsed (Note 2.) | IDM | mAdc | |||
| GateSource Voltage Continuous | VGS | 75 | Vdc | ||
| GateSource Voltage Nonrepetitive (tp 50 s) | VGSM | 800 | Vpk | ||
| THERMAL CHARACTERISTICS | |||||
| Total Device Dissipation FR5 Board (Note 3.) (TA = 25C) | PD | 225 | mW | ||
| Derate above 25C | 1.8 | mW/C | |||
| Thermal Resistance, Junction to Ambient | RJA | 556 | C/W | ||
| Total Device Dissipation Alumina Substrate,(Note 4.) (TA = 25C) | PD | 300 | mW | ||
| Derate above 25C | 2.4 | mW/C | |||
| Thermal Resistance, Junction to Ambient | RJA | 417 | C/W | ||
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | C | ||
| ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) | |||||
| DrainSource Breakdown Voltage (VGS = 0, ID = 10 Adc) | V(BR)DSS | 60 | Vdc | ||
| Zero Gate Voltage Drain Current TJ = 25C (VGS = 0, VDS = 60 Vdc) | IDSS | 1.0 | Adc | ||
| Zero Gate Voltage Drain Current TJ = 125C (VGS = 0, VDS = 60 Vdc) | IDSS | 500 | Adc | ||
| GateBody Leakage Current, Forward (VGS = 20 Vdc) | IGSSF | 1 | Adc | ||
| GateBody Leakage Current, Reverse (VGS = 20 Vdc) | IGSSR | Adc | |||
| Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) | VGS(th) | 1.0 | 1.6 | 2.5 | Vdc |
| OnState Drain Current (VDS 2.0 VDS(on), VGS = 10 Vdc) | ID(on) | 500 | mA | ||
| Static DrainSource OnState Voltage (VGS = 10 Vdc, ID = 500 mAdc) | VDS(on) | 0.375 | Vdc | ||
| Static DrainSource OnState Voltage (VGS = 5.0 Vdc, ID = 50 mAdc) | VDS(on) | Vdc | |||
| Static DrainSource OnState Resistance (VGS = 10 V, ID = 500 mAdc) TC = 25C | rDS(on) | 1.4 | 1.8 | Ohms | |
| Static DrainSource OnState Resistance (VGS = 10 V, ID = 500 mAdc) TC = 125C | rDS(on) | Ohms | |||
| Static DrainSource OnState Resistance (VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25C | rDS(on) | 7.5 | Ohms | ||
| Static DrainSource OnState Resistance (VGS = 5.0 Vdc, ID = 50 mAdc) TC = 125C | rDS(on) | 13.5 | Ohms | ||
| Forward Transconductance (VDS 2.0 VDS(on), ID = 200 mAdc) | gFS | 80 | mmhos | ||
| DYNAMIC CHARACTERISTICS | |||||
| Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) | Ciss | 17 | 50 | pF | |
| Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) | Coss | 10 | 25 | pF | |
| Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) | Crss | 2.5 | 5.0 | pF | |
| SWITCHING CHARACTERISTICS (Note 2.) | |||||
| TurnOn Delay Time (V DD = 25 Vdc , ID 500 mAdc) | td(on) | 7 | 20 | ns | |
| TurnOff Delay Time (V RG = 25 , RL = 50 , Vgen = 10 V) | td(off) | 11 | 40 | ns | |
| BODYDRAIN DIODE RATINGS | |||||
| Diode Forward OnVoltage (IS = 115 mAdc, V GS = 0 V) | VSD | -1.5 | Vdc | ||
| Source Current Continuous (Body Diode) | IS | -115 | mAdc | ||
| Source Current Pulsed | ISM | -800 | mAdc | ||
Ordering Information:
- Model: L2N7002WT1G
- Device Marking: 6C
- Shipping: 10000 Tape & Reel
Device Marking Diagram:
6C = Device Code
M = Month Code
Pin Assignment:
Top View:
3 (Gate) - 2 (Source) - 1 (Drain)
Simplified Schematic:
Gate - Source - Drain
Dimensions (SC-70 / SOT-323):
| DIM | MIN | NOM | MAX | MIN | INCHES |
|---|---|---|---|---|---|
| A | 0.80 | 0.90 | 1.00 | 0.032 | 0.039 |
| A1 | 0.00 | 0.05 | 0.10 | 0.000 | 0.004 |
| A2 | 0.70 | 0.028 | |||
| b | 0.30 | 0.35 | 0.40 | 0.012 | 0.016 |
| c | 0.10 | 0.18 | 0.25 | 0.004 | 0.010 |
| D | 1.80 | 2.10 | 2.20 | 0.071 | 0.087 |
| E | 1.15 | 1.24 | 1.35 | 0.045 | 0.053 |
| e | 1.20 | 1.30 | 1.40 | 0.047 | 0.055 |
| e1 | 0.65 | BSC | 0.026 | BSC | |
| L | 2.00 | 2.10 | 2.40 | 0.079 | 0.095 |
| HE | 0.425 | REF | 0.017 | REF |
Soldering Footprint:
| MIN | NOM | MAX | MIN | MAX | UNIT | |
|---|---|---|---|---|---|---|
| A | 0.05 | 0.075 | 0.10 | 0.002 | 0.004 | INCH |
| C | 0.014 | 0.016 | INCH | |||
| D | 0.075 | 0.080 | 0.085 | 0.003 | 0.003 | INCH |
| E | 0.085 | 0.090 | 0.095 | 0.003 | 0.004 | INCH |
| e | 0.035 | 0.040 | 0.045 | 0.001 | 0.002 | INCH |
1810251916_LRC-L2N7002WT1G_C12778.pdf
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